Growth of highly oriented ZnO nanorods by chemical vapor deposition

Sai Chang Liu; Jih-Jen Wu

Growth of highly oriented ZnO nanorods by chemical vapor deposition

Sai Chang Liu, Jih-Jen Wu

化學工程學系

研究成果: Conference article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

Highly-oriented ZnO nanorods were grown on the fused silica substrates by a thermal CVD technique using Zinc acetylacetonate (Zn(C₅H₇O₂)₂). The substrate was heated to 500°C and the vaporization temperature of Zn(C₅H₇O₂)₂ was keep at around 135°C. X-ray diffraction and TEM analyses reveal that the nanorods are preferentially oriented toward the c-axis direction. Photoluminescence (PL) and absorption measurements show a strong emission at around 380nm which corresponds to the near band-edge emission of the bulk ZnO. Moreover, the negligible green emission band in PL spectrum and the absence of E₁(LO) mode of the ZnO crystal in Raman spectrum indicate a low concentration of oxygen vacancy in the highly-oriented ZnO nanorods.

原文	English
頁（從 - 到）	49-57
頁數	9
期刊	Materials Research Society Symposium - Proceedings
卷	703
出版狀態	Published - 2002 一月 1
事件	Nanophase and Nanocomposite Materials IV - Boston, MA, United States 持續時間: 2001 十一月 26 → 2001 十一月 29

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

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title = "Growth of highly oriented ZnO nanorods by chemical vapor deposition",

abstract = "Highly-oriented ZnO nanorods were grown on the fused silica substrates by a thermal CVD technique using Zinc acetylacetonate (Zn(C5H7O2)2). The substrate was heated to 500°C and the vaporization temperature of Zn(C5H7O2)2 was keep at around 135°C. X-ray diffraction and TEM analyses reveal that the nanorods are preferentially oriented toward the c-axis direction. Photoluminescence (PL) and absorption measurements show a strong emission at around 380nm which corresponds to the near band-edge emission of the bulk ZnO. Moreover, the negligible green emission band in PL spectrum and the absence of E1(LO) mode of the ZnO crystal in Raman spectrum indicate a low concentration of oxygen vacancy in the highly-oriented ZnO nanorods.",

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T1 - Growth of highly oriented ZnO nanorods by chemical vapor deposition

AU - Liu, Sai Chang

AU - Wu, Jih-Jen

PY - 2002/1/1

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N2 - Highly-oriented ZnO nanorods were grown on the fused silica substrates by a thermal CVD technique using Zinc acetylacetonate (Zn(C5H7O2)2). The substrate was heated to 500°C and the vaporization temperature of Zn(C5H7O2)2 was keep at around 135°C. X-ray diffraction and TEM analyses reveal that the nanorods are preferentially oriented toward the c-axis direction. Photoluminescence (PL) and absorption measurements show a strong emission at around 380nm which corresponds to the near band-edge emission of the bulk ZnO. Moreover, the negligible green emission band in PL spectrum and the absence of E1(LO) mode of the ZnO crystal in Raman spectrum indicate a low concentration of oxygen vacancy in the highly-oriented ZnO nanorods.

AB - Highly-oriented ZnO nanorods were grown on the fused silica substrates by a thermal CVD technique using Zinc acetylacetonate (Zn(C5H7O2)2). The substrate was heated to 500°C and the vaporization temperature of Zn(C5H7O2)2 was keep at around 135°C. X-ray diffraction and TEM analyses reveal that the nanorods are preferentially oriented toward the c-axis direction. Photoluminescence (PL) and absorption measurements show a strong emission at around 380nm which corresponds to the near band-edge emission of the bulk ZnO. Moreover, the negligible green emission band in PL spectrum and the absence of E1(LO) mode of the ZnO crystal in Raman spectrum indicate a low concentration of oxygen vacancy in the highly-oriented ZnO nanorods.

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