Growth of InGaN self-assembled quantum dots and their application to photodiodes

L. W. Ji; Y. K. Su; S. J. Chang; S. T. Tsai; S. C. Hung; R. W. Chuang; T. H. Fang; T. Y. Tsai

doi:10.1116/1.1722353

Growth of InGaN self-assembled quantum dots and their application to photodiodes

L. W. Ji, Y. K. Su, S. J. Chang, S. T. Tsai, S. C. Hung, R. W. Chuang, T. H. Fang, T. Y. Tsai

微電子工程研究所

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5 引文斯高帕斯（Scopus）

摘要

The growth of InGaN self-assembled quantum dots (QD) using metallorganic chemical vapor deposition (MOCVD) method was investigated. The InGaN QDs were successfully fabricated with a typical lateral size of 25 nm and average heigth of 4.1 nm, with a 12 s growth interruption. The fabrication of InGaN metal-semiconductor-metal (MSM) photodiodes with and without QDs was also presented. The QD photodiodes with lower dark current was found to be able to operate in the normal incidence mode and exhibited a stronger photoresponse.

原文	English
頁（從 - 到）	792-795
頁數	4
期刊	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
卷	22
發行號	3
DOIs	https://doi.org/10.1116/1.1722353
出版狀態	Published - 2004 5月

All Science Journal Classification (ASJC) codes

凝聚態物理學
表面和介面
表面、塗料和薄膜

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10.1116/1.1722353

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@article{abdc77fdd80c42518c9d30f57517ece1,

title = "Growth of InGaN self-assembled quantum dots and their application to photodiodes",

abstract = "The growth of InGaN self-assembled quantum dots (QD) using metallorganic chemical vapor deposition (MOCVD) method was investigated. The InGaN QDs were successfully fabricated with a typical lateral size of 25 nm and average heigth of 4.1 nm, with a 12 s growth interruption. The fabrication of InGaN metal-semiconductor-metal (MSM) photodiodes with and without QDs was also presented. The QD photodiodes with lower dark current was found to be able to operate in the normal incidence mode and exhibited a stronger photoresponse.",

author = "Ji, {L. W.} and Su, {Y. K.} and Chang, {S. J.} and Tsai, {S. T.} and Hung, {S. C.} and Chuang, {R. W.} and Fang, {T. H.} and Tsai, {T. Y.}",

year = "2004",

month = may,

doi = "10.1116/1.1722353",

language = "English",

volume = "22",

pages = "792--795",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "3",

}

TY - JOUR

T1 - Growth of InGaN self-assembled quantum dots and their application to photodiodes

AU - Ji, L. W.

AU - Su, Y. K.

AU - Chang, S. J.

AU - Tsai, S. T.

AU - Hung, S. C.

AU - Chuang, R. W.

AU - Fang, T. H.

AU - Tsai, T. Y.

PY - 2004/5

Y1 - 2004/5

N2 - The growth of InGaN self-assembled quantum dots (QD) using metallorganic chemical vapor deposition (MOCVD) method was investigated. The InGaN QDs were successfully fabricated with a typical lateral size of 25 nm and average heigth of 4.1 nm, with a 12 s growth interruption. The fabrication of InGaN metal-semiconductor-metal (MSM) photodiodes with and without QDs was also presented. The QD photodiodes with lower dark current was found to be able to operate in the normal incidence mode and exhibited a stronger photoresponse.

AB - The growth of InGaN self-assembled quantum dots (QD) using metallorganic chemical vapor deposition (MOCVD) method was investigated. The InGaN QDs were successfully fabricated with a typical lateral size of 25 nm and average heigth of 4.1 nm, with a 12 s growth interruption. The fabrication of InGaN metal-semiconductor-metal (MSM) photodiodes with and without QDs was also presented. The QD photodiodes with lower dark current was found to be able to operate in the normal incidence mode and exhibited a stronger photoresponse.

UR - http://www.scopus.com/inward/record.url?scp=3142571483&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3142571483&partnerID=8YFLogxK

U2 - 10.1116/1.1722353

DO - 10.1116/1.1722353

M3 - Article

AN - SCOPUS:3142571483

SN - 0734-2101

VL - 22

SP - 792

EP - 795

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 3

ER -

Growth of InGaN self-assembled quantum dots and their application to photodiodes

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