Growth of InN nanorods prepared by plasma-assisted molecular beam epitaxy with varying Cr thicknesses

K. W. Liu, S. J. Young, S. J. Chang, T. H. Hsueh, Y. Z. Chen, K. J. Chen, H. Hung, S. M. Wang, Y. L. Wu

研究成果: Article

2 引文 (Scopus)

摘要

This study investigates how the thickness of Cr deposited on the Si substrate after the nitridation process influences the AIN buffer layer and the InN nanorods. Atomic force microscopy results reveal that different thicknesses of Cr form varying sizes of CrN nanoislands. The results of scanning electron microscopy and X-ray diffraction show that a Cr deposition thickness of 10 nm results in CrN nanoislands after the nitridation process, improving the quality and density of InN nanorods. A Cr layer that was too thick led to polycrystalline InN growth. The results of transmission electron microscopy indicate a baseball bat-like InN nanorod growth mechanism.

原文English
頁(從 - 到)113-118
頁數6
期刊Journal of Crystal Growth
347
發行號1
DOIs
出版狀態Published - 2012 五月 15

指紋

Nanorods
Molecular beam epitaxy
nanorods
molecular beam epitaxy
Nitridation
Plasmas
bats
Buffer layers
Atomic force microscopy
buffers
atomic force microscopy
Transmission electron microscopy
X ray diffraction
transmission electron microscopy
Scanning electron microscopy
scanning electron microscopy
Substrates
diffraction
x rays

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

引用此文

Liu, K. W. ; Young, S. J. ; Chang, S. J. ; Hsueh, T. H. ; Chen, Y. Z. ; Chen, K. J. ; Hung, H. ; Wang, S. M. ; Wu, Y. L. / Growth of InN nanorods prepared by plasma-assisted molecular beam epitaxy with varying Cr thicknesses. 於: Journal of Crystal Growth. 2012 ; 卷 347, 編號 1. 頁 113-118.
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abstract = "This study investigates how the thickness of Cr deposited on the Si substrate after the nitridation process influences the AIN buffer layer and the InN nanorods. Atomic force microscopy results reveal that different thicknesses of Cr form varying sizes of CrN nanoislands. The results of scanning electron microscopy and X-ray diffraction show that a Cr deposition thickness of 10 nm results in CrN nanoislands after the nitridation process, improving the quality and density of InN nanorods. A Cr layer that was too thick led to polycrystalline InN growth. The results of transmission electron microscopy indicate a baseball bat-like InN nanorod growth mechanism.",
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Growth of InN nanorods prepared by plasma-assisted molecular beam epitaxy with varying Cr thicknesses. / Liu, K. W.; Young, S. J.; Chang, S. J.; Hsueh, T. H.; Chen, Y. Z.; Chen, K. J.; Hung, H.; Wang, S. M.; Wu, Y. L.

於: Journal of Crystal Growth, 卷 347, 編號 1, 15.05.2012, p. 113-118.

研究成果: Article

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AU - Liu, K. W.

AU - Young, S. J.

AU - Chang, S. J.

AU - Hsueh, T. H.

AU - Chen, Y. Z.

AU - Chen, K. J.

AU - Hung, H.

AU - Wang, S. M.

AU - Wu, Y. L.

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AB - This study investigates how the thickness of Cr deposited on the Si substrate after the nitridation process influences the AIN buffer layer and the InN nanorods. Atomic force microscopy results reveal that different thicknesses of Cr form varying sizes of CrN nanoislands. The results of scanning electron microscopy and X-ray diffraction show that a Cr deposition thickness of 10 nm results in CrN nanoislands after the nitridation process, improving the quality and density of InN nanorods. A Cr layer that was too thick led to polycrystalline InN growth. The results of transmission electron microscopy indicate a baseball bat-like InN nanorod growth mechanism.

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