Growth of nanocrystalline diamond films in CCl4/H2 ambient

Jih Jen Wu, Chen Hao Ku, Te Chi Wong, Chien Ting Wu, Kuei Hsien Chen, Li Chyong Chen

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

We investigated the growth characteristics of the nanocrystalline diamond films using CCl4/H2 as gas sources in a hot-filament chemical vapor deposition (CVD) reactor. Successful growth of nanocrystalline diamond at typical growth condition of 1.5-2.5% CCl4 and 550-730 °C substrate temperature has been demonstrated. Glancing angle X-ray diffraction (XRD) clearly indicated the formation of diamond in the films. Typical root-mean-square surface roughness of 10-15 nm and an optimal root-mean-square surface roughness of 6 nm have been achieved. Transmission electron microscopy (TEM) analyses indicated that nanocrystalline diamond film with an average grain size in the range of 10-20 nm was deposited from 2.5% CCl4/H2 at 610°C. Effects of different source gas composition and substrate temperature on the grain nucleation and grain growth processes, whereby the grain size of the nanocrystalline film could be controlled, were discussed.

原文English
頁(從 - 到)24-30
頁數7
期刊Thin Solid Films
473
發行號1
DOIs
出版狀態Published - 2005 二月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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