Growth of nanocrystalline diamond films in CCl4/H2 ambient

Jih Jen Wu; Chen Hao Ku; Te Chi Wong; Chien Ting Wu; Kuei Hsien Chen; Li Chyong Chen

doi:10.1016/j.tsf.2004.06.152

Growth of nanocrystalline diamond films in CCl₄/H₂ ambient

Jih Jen Wu, Chen Hao Ku, Te Chi Wong, Chien Ting Wu, Kuei Hsien Chen, Li Chyong Chen

化學工程學系

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

We investigated the growth characteristics of the nanocrystalline diamond films using CCl₄/H₂ as gas sources in a hot-filament chemical vapor deposition (CVD) reactor. Successful growth of nanocrystalline diamond at typical growth condition of 1.5-2.5% CCl₄ and 550-730 °C substrate temperature has been demonstrated. Glancing angle X-ray diffraction (XRD) clearly indicated the formation of diamond in the films. Typical root-mean-square surface roughness of 10-15 nm and an optimal root-mean-square surface roughness of 6 nm have been achieved. Transmission electron microscopy (TEM) analyses indicated that nanocrystalline diamond film with an average grain size in the range of 10-20 nm was deposited from 2.5% CCl₄/H₂ at 610°C. Effects of different source gas composition and substrate temperature on the grain nucleation and grain growth processes, whereby the grain size of the nanocrystalline film could be controlled, were discussed.

原文	English
頁（從 - 到）	24-30
頁數	7
期刊	Thin Solid Films
卷	473
發行號	1
DOIs	https://doi.org/10.1016/j.tsf.2004.06.152
出版狀態	Published - 2005 二月 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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abstract = "We investigated the growth characteristics of the nanocrystalline diamond films using CCl4/H2 as gas sources in a hot-filament chemical vapor deposition (CVD) reactor. Successful growth of nanocrystalline diamond at typical growth condition of 1.5-2.5% CCl4 and 550-730 °C substrate temperature has been demonstrated. Glancing angle X-ray diffraction (XRD) clearly indicated the formation of diamond in the films. Typical root-mean-square surface roughness of 10-15 nm and an optimal root-mean-square surface roughness of 6 nm have been achieved. Transmission electron microscopy (TEM) analyses indicated that nanocrystalline diamond film with an average grain size in the range of 10-20 nm was deposited from 2.5% CCl4/H2 at 610°C. Effects of different source gas composition and substrate temperature on the grain nucleation and grain growth processes, whereby the grain size of the nanocrystalline film could be controlled, were discussed.",

author = "Wu, {Jih Jen} and Ku, {Chen Hao} and Wong, {Te Chi} and Wu, {Chien Ting} and Chen, {Kuei Hsien} and Chen, {Li Chyong}",

note = "Funding Information: All authors would like to gratefully acknowledge the financial support from the National Science Council and Academia Sinica in Taiwan. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

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AU - Chen, Kuei Hsien

AU - Chen, Li Chyong

N1 - Funding Information: All authors would like to gratefully acknowledge the financial support from the National Science Council and Academia Sinica in Taiwan. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

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N2 - We investigated the growth characteristics of the nanocrystalline diamond films using CCl4/H2 as gas sources in a hot-filament chemical vapor deposition (CVD) reactor. Successful growth of nanocrystalline diamond at typical growth condition of 1.5-2.5% CCl4 and 550-730 °C substrate temperature has been demonstrated. Glancing angle X-ray diffraction (XRD) clearly indicated the formation of diamond in the films. Typical root-mean-square surface roughness of 10-15 nm and an optimal root-mean-square surface roughness of 6 nm have been achieved. Transmission electron microscopy (TEM) analyses indicated that nanocrystalline diamond film with an average grain size in the range of 10-20 nm was deposited from 2.5% CCl4/H2 at 610°C. Effects of different source gas composition and substrate temperature on the grain nucleation and grain growth processes, whereby the grain size of the nanocrystalline film could be controlled, were discussed.

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