Growth of nanocrystalline silicon thin film with layer-by-layer technique for fast photo-detecting applications

Chun Yu Lin, Yean Kuen Fang, Shih Fang Chen, Ping Chang Lin, Chun Sheng Lin, Tse Heng Chou, Jenn Shyong Hwang, Kuang I. Lin

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

High mobility nanocrystalline silicon (nc-Si) films with layer-by-layer technique for fast photo-detecting applications were studied. The structure and morphology of films were studied by means of XRD, micro-Raman scattering, SEM and AFM. The Hall mobility and absorption properties have been investigated and found they were seriously affected by the number of layers in growing, i.e., with increasing of layer number, Hall mobility increased but absorption coefficient decreased. The optimum layer number of nc-Si films for fast near-IR photo-detecting is 7 with film thickness of 1400 nm, while that for fast visible photo-detecting is 17 with film thickness of 3400 nm.

原文English
頁(從 - 到)251-254
頁數4
期刊Materials Science and Engineering B: Solid-State Materials for Advanced Technology
127
發行號2-3
DOIs
出版狀態Published - 2006 二月 25

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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