Growth of nanoscale InGaN self-assembled quantum dots

L. W. Ji, Y. K. Su, S. J. Chang, L. W. Wu, T. H. Fang, J. F. Chen, T. Y. Tsai, Q. K. Xue, S. C. Chen

研究成果: Article

61 引文 斯高帕斯(Scopus)

摘要

It has been demonstrated that we can use interrupted growth mode in metalorganic chemical vapor deposition (MOCVD) to fabricate nanoscale InGaN self-assembed quantum dots (QDs). With a 12-s growth interruption, we successfully formed InGaN QDs with a typical lateral size of 25 nm and an average height of 4.1 nm. The QDs density is about 2 × 1010cm-2. In contrast, much larger InGaN QDs were obtained without growth interruption. Compared with samples prepared without growth interrupt, a much larger photoluminescence (PL) intensity and a large 67 meV PL blue shift was observed from samples prepared with growth interrupt. These results suggest such a growth interrupt method is potentially useful in nitride-based optoelectronic devices grown by MOCVD.

原文English
頁(從 - 到)144-148
頁數5
期刊Journal of Crystal Growth
249
發行號1-2
DOIs
出版狀態Published - 2003 二月 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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