Growth of quaternary AlInGaN with various TMI molar rates

S. F. Yu, S. J. Chang, R. M. Lin, Y. H. Lin, Y. C. Lu, S. P. Chang, Y. Z. Chiou

研究成果: Article

14 引文 (Scopus)

摘要

We report the growth of very thick (∼400 nm) quaternary AlInGaN layer on GaN/sapphire template by metalorganic chemical vapor deposition. By properly controlling the trimethylindium molar flow rate, we successfully achieved an Al0.89In0.02GaN layer perfectly lattice matched to the underneath GaN buffer. It was found that we can minimize the number of V-defect pits and the linewidth of X-ray (3 0 2) diffraction peak. Other than the AlInGaN-related photoluminescence peak, we also observed a low-energy band which is originated from indium segregation.

原文English
頁(從 - 到)1920-1924
頁數5
期刊Journal of Crystal Growth
312
發行號12-13
DOIs
出版狀態Published - 2010 六月 1

指紋

Indium
Aluminum Oxide
Metallorganic chemical vapor deposition
Sapphire
Linewidth
Band structure
Photoluminescence
Buffers
Diffraction
Flow rate
X rays
Defects
metalorganic chemical vapor deposition
energy bands
indium
sapphire
templates
flow velocity
buffers
photoluminescence

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

引用此文

Yu, S. F. ; Chang, S. J. ; Lin, R. M. ; Lin, Y. H. ; Lu, Y. C. ; Chang, S. P. ; Chiou, Y. Z. / Growth of quaternary AlInGaN with various TMI molar rates. 於: Journal of Crystal Growth. 2010 ; 卷 312, 編號 12-13. 頁 1920-1924.
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Growth of quaternary AlInGaN with various TMI molar rates. / Yu, S. F.; Chang, S. J.; Lin, R. M.; Lin, Y. H.; Lu, Y. C.; Chang, S. P.; Chiou, Y. Z.

於: Journal of Crystal Growth, 卷 312, 編號 12-13, 01.06.2010, p. 1920-1924.

研究成果: Article

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AU - Chang, S. J.

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AU - Lin, Y. H.

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AU - Chang, S. P.

AU - Chiou, Y. Z.

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AB - We report the growth of very thick (∼400 nm) quaternary AlInGaN layer on GaN/sapphire template by metalorganic chemical vapor deposition. By properly controlling the trimethylindium molar flow rate, we successfully achieved an Al0.89In0.02GaN layer perfectly lattice matched to the underneath GaN buffer. It was found that we can minimize the number of V-defect pits and the linewidth of X-ray (3 0 2) diffraction peak. Other than the AlInGaN-related photoluminescence peak, we also observed a low-energy band which is originated from indium segregation.

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