Growth of quaternary AlInGaN with various TMI molar rates

S. F. Yu; S. J. Chang; R. M. Lin; Y. H. Lin; Y. C. Lu; S. P. Chang; Y. Z. Chiou

doi:10.1016/j.jcrysgro.2010.03.027

Growth of quaternary AlInGaN with various TMI molar rates

S. F. Yu, S. J. Chang, R. M. Lin, Y. H. Lin, Y. C. Lu, S. P. Chang, Y. Z. Chiou

研究成果: Article › 同行評審

16 引文斯高帕斯（Scopus）

摘要

We report the growth of very thick (∼400 nm) quaternary AlInGaN layer on GaN/sapphire template by metalorganic chemical vapor deposition. By properly controlling the trimethylindium molar flow rate, we successfully achieved an Al_0.89In_0.02GaN layer perfectly lattice matched to the underneath GaN buffer. It was found that we can minimize the number of V-defect pits and the linewidth of X-ray (3 0 2) diffraction peak. Other than the AlInGaN-related photoluminescence peak, we also observed a low-energy band which is originated from indium segregation.

原文	English
頁（從 - 到）	1920-1924
頁數	5
期刊	Journal of Crystal Growth
卷	312
發行號	12-13
DOIs	https://doi.org/10.1016/j.jcrysgro.2010.03.027
出版狀態	Published - 2010 6月 1

All Science Journal Classification (ASJC) codes

凝聚態物理學
無機化學
材料化學

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10.1016/j.jcrysgro.2010.03.027

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title = "Growth of quaternary AlInGaN with various TMI molar rates",

abstract = "We report the growth of very thick (∼400 nm) quaternary AlInGaN layer on GaN/sapphire template by metalorganic chemical vapor deposition. By properly controlling the trimethylindium molar flow rate, we successfully achieved an Al0.89In0.02GaN layer perfectly lattice matched to the underneath GaN buffer. It was found that we can minimize the number of V-defect pits and the linewidth of X-ray (3 0 2) diffraction peak. Other than the AlInGaN-related photoluminescence peak, we also observed a low-energy band which is originated from indium segregation.",

author = "Yu, {S. F.} and Chang, {S. J.} and Lin, {R. M.} and Lin, {Y. H.} and Lu, {Y. C.} and Chang, {S. P.} and Chiou, {Y. Z.}",

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T1 - Growth of quaternary AlInGaN with various TMI molar rates

AU - Yu, S. F.

AU - Chang, S. J.

AU - Lin, R. M.

AU - Lin, Y. H.

AU - Lu, Y. C.

AU - Chang, S. P.

AU - Chiou, Y. Z.

PY - 2010/6/1

Y1 - 2010/6/1

N2 - We report the growth of very thick (∼400 nm) quaternary AlInGaN layer on GaN/sapphire template by metalorganic chemical vapor deposition. By properly controlling the trimethylindium molar flow rate, we successfully achieved an Al0.89In0.02GaN layer perfectly lattice matched to the underneath GaN buffer. It was found that we can minimize the number of V-defect pits and the linewidth of X-ray (3 0 2) diffraction peak. Other than the AlInGaN-related photoluminescence peak, we also observed a low-energy band which is originated from indium segregation.

AB - We report the growth of very thick (∼400 nm) quaternary AlInGaN layer on GaN/sapphire template by metalorganic chemical vapor deposition. By properly controlling the trimethylindium molar flow rate, we successfully achieved an Al0.89In0.02GaN layer perfectly lattice matched to the underneath GaN buffer. It was found that we can minimize the number of V-defect pits and the linewidth of X-ray (3 0 2) diffraction peak. Other than the AlInGaN-related photoluminescence peak, we also observed a low-energy band which is originated from indium segregation.

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M3 - Article

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SN - 0022-0248

VL - 312

SP - 1920

EP - 1924

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 12-13

ER -

Growth of quaternary AlInGaN with various TMI molar rates

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