An approach for synthesizing single crystal silicon carbide at low temperature using liquid phase epitaxy is proposed. A mixture of samarium and cobalt (Sm:Co = 64:36 at.%) was used as a unique solvent in this synthesis process. Electron microscopy indicates the epitaxial growth of single crystal silicon carbide with a thickness of 4 μm over a silicon wafer followed by the formation of polycrystalline silicon carbide and silicon carbide whiskers. Some growth mechanisms are proposed to explain the formation of silicon carbide. It is hypothesized that the single crystal silicon carbide grew from the liquid phase, whereas polycrystalline silicon carbide whiskers grew via the vapor-liquid-solid process.
|頁（從 - 到）||75-79|
|期刊||Proceedings of the Institution of Mechanical Engineers, Part N: Journal of Nanoengineering and Nanosystems|
|出版狀態||Published - 2012 六月 1|
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering