Growth of ternary ZnCdSe nanowires and the fabrication of ZnCdSe nanowire photodetectors

S. J. Chang, C. H. Hsiao, B. W. Lan, S. C. Hung, B. R. Huang, S. J. Young, Y. C. Cheng, S. H. Chih

研究成果: Article

11 引文 斯高帕斯(Scopus)

摘要

The authors report the growth of high density ternary ZnCdSe nanowires on an oxidized Si(100) substrate using molecular beam epitaxy and the fabrication of a ZnCdSe nanowire photodetector. It was found that the as-grown ZnCdSe nanowires exhibited a mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that average length and width of the ZnCdSe nanowires were ∼1.8 μm and ∼42.7 nm, respectively. Furthermore, it was found that photocurrent to dark current contrast ratio was around 25 for the fabricated photodetector under 5 V applied bias.

原文English
頁(從 - 到)50-57
頁數8
期刊Superlattices and Microstructures
48
發行號1
DOIs
出版狀態Published - 2010 七月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

引用此

Chang, S. J., Hsiao, C. H., Lan, B. W., Hung, S. C., Huang, B. R., Young, S. J., Cheng, Y. C., & Chih, S. H. (2010). Growth of ternary ZnCdSe nanowires and the fabrication of ZnCdSe nanowire photodetectors. Superlattices and Microstructures, 48(1), 50-57. https://doi.org/10.1016/j.spmi.2010.04.014