The authors report the growth of high density ternary ZnCdSe nanowires on an oxidized Si(100) substrate using molecular beam epitaxy and the fabrication of a ZnCdSe nanowire photodetector. It was found that the as-grown ZnCdSe nanowires exhibited a mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that average length and width of the ZnCdSe nanowires were ∼1.8 μm and ∼42.7 nm, respectively. Furthermore, it was found that photocurrent to dark current contrast ratio was around 25 for the fabricated photodetector under 5 V applied bias.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering