Growth of ZnSe1-xTex nanotips and the fabrication of ZnSe1-xTex nanotip-based photodetector

S. J. Chang, C. H. Hsiao, S. C. Hung, S. H. Chih, B. W. Lan, S. B. Wang, S. P. Chang, Y. C. Cheng, T. C. Li, B. R. Huang

研究成果: Article

10 引文 (Scopus)

摘要

We reported the growth of high density ternary ZnSeTe nanotips on oxidized Si(100) substrate and the fabrication of the ZnSeTe nanotip-based photodetector. The as-grown ZnSeTe nanotips exhibited a mixture of cubic zinc blende and hexagonal wurtzite structures. The average length of the ZnSeTe nanotips was 0.9 μm. With 5% Te incorporation, the 20 K photoluminescence peak redshifted by 27 nm. Furthermore, a photocurrent to dark current contrast ratio was larger than 40 for the fabricated photodetector.

原文English
期刊Journal of the Electrochemical Society
157
發行號1
DOIs
出版狀態Published - 2010 一月 1

指紋

Nanotips
Photodetectors
Fabrication
Dark currents
Photocurrents
Zinc
Photoluminescence
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

引用此文

Chang, S. J. ; Hsiao, C. H. ; Hung, S. C. ; Chih, S. H. ; Lan, B. W. ; Wang, S. B. ; Chang, S. P. ; Cheng, Y. C. ; Li, T. C. ; Huang, B. R. / Growth of ZnSe1-xTex nanotips and the fabrication of ZnSe1-xTex nanotip-based photodetector. 於: Journal of the Electrochemical Society. 2010 ; 卷 157, 編號 1.
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abstract = "We reported the growth of high density ternary ZnSeTe nanotips on oxidized Si(100) substrate and the fabrication of the ZnSeTe nanotip-based photodetector. The as-grown ZnSeTe nanotips exhibited a mixture of cubic zinc blende and hexagonal wurtzite structures. The average length of the ZnSeTe nanotips was 0.9 μm. With 5{\%} Te incorporation, the 20 K photoluminescence peak redshifted by 27 nm. Furthermore, a photocurrent to dark current contrast ratio was larger than 40 for the fabricated photodetector.",
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Growth of ZnSe1-xTex nanotips and the fabrication of ZnSe1-xTex nanotip-based photodetector. / Chang, S. J.; Hsiao, C. H.; Hung, S. C.; Chih, S. H.; Lan, B. W.; Wang, S. B.; Chang, S. P.; Cheng, Y. C.; Li, T. C.; Huang, B. R.

於: Journal of the Electrochemical Society, 卷 157, 編號 1, 01.01.2010.

研究成果: Article

TY - JOUR

T1 - Growth of ZnSe1-xTex nanotips and the fabrication of ZnSe1-xTex nanotip-based photodetector

AU - Chang, S. J.

AU - Hsiao, C. H.

AU - Hung, S. C.

AU - Chih, S. H.

AU - Lan, B. W.

AU - Wang, S. B.

AU - Chang, S. P.

AU - Cheng, Y. C.

AU - Li, T. C.

AU - Huang, B. R.

PY - 2010/1/1

Y1 - 2010/1/1

N2 - We reported the growth of high density ternary ZnSeTe nanotips on oxidized Si(100) substrate and the fabrication of the ZnSeTe nanotip-based photodetector. The as-grown ZnSeTe nanotips exhibited a mixture of cubic zinc blende and hexagonal wurtzite structures. The average length of the ZnSeTe nanotips was 0.9 μm. With 5% Te incorporation, the 20 K photoluminescence peak redshifted by 27 nm. Furthermore, a photocurrent to dark current contrast ratio was larger than 40 for the fabricated photodetector.

AB - We reported the growth of high density ternary ZnSeTe nanotips on oxidized Si(100) substrate and the fabrication of the ZnSeTe nanotip-based photodetector. The as-grown ZnSeTe nanotips exhibited a mixture of cubic zinc blende and hexagonal wurtzite structures. The average length of the ZnSeTe nanotips was 0.9 μm. With 5% Te incorporation, the 20 K photoluminescence peak redshifted by 27 nm. Furthermore, a photocurrent to dark current contrast ratio was larger than 40 for the fabricated photodetector.

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