Growth of ZnSe1-xTex nanotips and the fabrication of ZnSe1-xTex nanotip-based photodetector

S. J. Chang, C. H. Hsiao, S. C. Hung, S. H. Chih, B. W. Lan, S. B. Wang, S. P. Chang, Y. C. Cheng, T. C. Li, B. R. Huang

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

We reported the growth of high density ternary ZnSeTe nanotips on oxidized Si(100) substrate and the fabrication of the ZnSeTe nanotip-based photodetector. The as-grown ZnSeTe nanotips exhibited a mixture of cubic zinc blende and hexagonal wurtzite structures. The average length of the ZnSeTe nanotips was 0.9 μm. With 5% Te incorporation, the 20 K photoluminescence peak redshifted by 27 nm. Furthermore, a photocurrent to dark current contrast ratio was larger than 40 for the fabricated photodetector.

原文English
頁(從 - 到)K1-K4
期刊Journal of the Electrochemical Society
157
發行號1
DOIs
出版狀態Published - 2010

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學

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