Growth of ZnSe1-xTex nanotips and the fabrication of ZnSe1-xTex nanotip-based photodetector

S. J. Chang; C. H. Hsiao; S. C. Hung; S. H. Chih; B. W. Lan; S. B. Wang; S. P. Chang; Y. C. Cheng; T. C. Li; B. R. Huang

doi:10.1149/1.3246004

Growth of ZnSe_1-xTe_x nanotips and the fabrication of ZnSe_1-xTe_x nanotip-based photodetector

S. J. Chang, C. H. Hsiao, S. C. Hung, S. H. Chih, B. W. Lan, S. B. Wang, S. P. Chang, Y. C. Cheng, T. C. Li, B. R. Huang

研究成果: Article › 同行評審

11 引文斯高帕斯（Scopus）

摘要

We reported the growth of high density ternary ZnSeTe nanotips on oxidized Si(100) substrate and the fabrication of the ZnSeTe nanotip-based photodetector. The as-grown ZnSeTe nanotips exhibited a mixture of cubic zinc blende and hexagonal wurtzite structures. The average length of the ZnSeTe nanotips was 0.9 μm. With 5% Te incorporation, the 20 K photoluminescence peak redshifted by 27 nm. Furthermore, a photocurrent to dark current contrast ratio was larger than 40 for the fabricated photodetector.

原文	English
頁（從 - 到）	K1-K4
期刊	Journal of the Electrochemical Society
卷	157
發行號	1
DOIs	https://doi.org/10.1149/1.3246004
出版狀態	Published - 2010

All Science Journal Classification (ASJC) codes

電子、光磁材料
可再生能源、永續發展與環境
表面、塗料和薄膜
電化學
材料化學

UN SDG

此研究成果有助於以下永續發展目標

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10.1149/1.3246004

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abstract = "We reported the growth of high density ternary ZnSeTe nanotips on oxidized Si(100) substrate and the fabrication of the ZnSeTe nanotip-based photodetector. The as-grown ZnSeTe nanotips exhibited a mixture of cubic zinc blende and hexagonal wurtzite structures. The average length of the ZnSeTe nanotips was 0.9 μm. With 5% Te incorporation, the 20 K photoluminescence peak redshifted by 27 nm. Furthermore, a photocurrent to dark current contrast ratio was larger than 40 for the fabricated photodetector.",

author = "Chang, {S. J.} and Hsiao, {C. H.} and Hung, {S. C.} and Chih, {S. H.} and Lan, {B. W.} and Wang, {S. B.} and Chang, {S. P.} and Cheng, {Y. C.} and Li, {T. C.} and Huang, {B. R.}",

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doi = "10.1149/1.3246004",

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T1 - Growth of ZnSe1-xTex nanotips and the fabrication of ZnSe1-xTex nanotip-based photodetector

AU - Chang, S. J.

AU - Hsiao, C. H.

AU - Hung, S. C.

AU - Chih, S. H.

AU - Lan, B. W.

AU - Wang, S. B.

AU - Chang, S. P.

AU - Cheng, Y. C.

AU - Li, T. C.

AU - Huang, B. R.

PY - 2010

Y1 - 2010

N2 - We reported the growth of high density ternary ZnSeTe nanotips on oxidized Si(100) substrate and the fabrication of the ZnSeTe nanotip-based photodetector. The as-grown ZnSeTe nanotips exhibited a mixture of cubic zinc blende and hexagonal wurtzite structures. The average length of the ZnSeTe nanotips was 0.9 μm. With 5% Te incorporation, the 20 K photoluminescence peak redshifted by 27 nm. Furthermore, a photocurrent to dark current contrast ratio was larger than 40 for the fabricated photodetector.

AB - We reported the growth of high density ternary ZnSeTe nanotips on oxidized Si(100) substrate and the fabrication of the ZnSeTe nanotip-based photodetector. The as-grown ZnSeTe nanotips exhibited a mixture of cubic zinc blende and hexagonal wurtzite structures. The average length of the ZnSeTe nanotips was 0.9 μm. With 5% Te incorporation, the 20 K photoluminescence peak redshifted by 27 nm. Furthermore, a photocurrent to dark current contrast ratio was larger than 40 for the fabricated photodetector.

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