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Growth of ZnSe1-xTex nanotips and the fabrication of ZnSe1-xTex nanotip-based photodetector

  • S. J. Chang
  • , C. H. Hsiao
  • , S. C. Hung
  • , S. H. Chih
  • , B. W. Lan
  • , S. B. Wang
  • , S. P. Chang
  • , Y. C. Cheng
  • , T. C. Li
  • , B. R. Huang

研究成果: Article同行評審

11   連結會在新分頁中打開 引文 斯高帕斯(Scopus)

摘要

We reported the growth of high density ternary ZnSeTe nanotips on oxidized Si(100) substrate and the fabrication of the ZnSeTe nanotip-based photodetector. The as-grown ZnSeTe nanotips exhibited a mixture of cubic zinc blende and hexagonal wurtzite structures. The average length of the ZnSeTe nanotips was 0.9 μm. With 5% Te incorporation, the 20 K photoluminescence peak redshifted by 27 nm. Furthermore, a photocurrent to dark current contrast ratio was larger than 40 for the fabricated photodetector.

原文English
頁(從 - 到)K1-K4
期刊Journal of the Electrochemical Society
157
發行號1
DOIs
出版狀態Published - 2010

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學

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