Growth Temperature Dependence of low-Noise Mesfet in Molecular-Beam Epitaxy

Y. C. Chou, C. T. Lee, C. D. Chen, K. C. Chu

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

The substrate growth temperature dependence of electrical properties for a low-noise MESFET fabricated on MBE-grown material has been demonstrated. The optimum noise figure and its associated gain were attributed to the higher epilayer quality and mobility at a growth temperature of 650ΰC between temperatures of 550ΰC and 700ΰC.

原文English
頁(從 - 到)7-8
頁數2
期刊Electronics Letters
23
發行號1
DOIs
出版狀態Published - 1987

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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