Hall effect measurements on new thermoelectric materials

Jarrod Short, Sim Loo, Sangeeta Lal, Kuei Fang Hsu, Eric Quarez, Mercouri G. Kanatzidis, Timothy P. Hogan

研究成果: Conference article

1 引文 斯高帕斯(Scopus)


In the field of thermoelectrics, the figure of merit of new materials is based on the electrical conductivity, thermoelectric power, and thermal conductivity of the sample, however additional insight is gained through knowledge of the carrier concentrations and mobility in the materials. The figure of merit is commonly related to the material properties through the B factor which is directly dependent on the mobility of the carriers as well as the effective mass. To gain additional insight on the new materials of interest for thermoelectric applications, a Hall Effect system has been developed for measuring the temperature dependent carrier concentrations and mobilities. In this paper, the measurement system will be described, and recent results for several new materials will be presented.

頁(從 - 到)323-332
期刊Materials Research Society Symposium - Proceedings
出版狀態Published - 2003 十二月 1
事件Thermoelectric Materials 2003 - Research and Applications - Boston, MA., United States
持續時間: 2003 十二月 12003 十二月 3

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • 引用此

    Short, J., Loo, S., Lal, S., Hsu, K. F., Quarez, E., Kanatzidis, M. G., & Hogan, T. P. (2003). Hall effect measurements on new thermoelectric materials. Materials Research Society Symposium - Proceedings, 793, 323-332.