Hall effect measurements on new thermoelectric materials

Jarrod Short, Sim Loo, Sangeeta Lal, Kuei Fang Hsu, Eric Quarez, Mercouri G. Kanatzidis, Timothy P. Hogan

研究成果: Conference article同行評審

2 引文 斯高帕斯(Scopus)

摘要

In the field of thermoelectrics, the figure of merit of new materials is based on the electrical conductivity, thermoelectric power, and thermal conductivity of the sample, however additional insight is gained through knowledge of the carrier concentrations and mobility in the materials. The figure of merit is commonly related to the material properties through the B factor which is directly dependent on the mobility of the carriers as well as the effective mass. To gain additional insight on the new materials of interest for thermoelectric applications, a Hall Effect system has been developed for measuring the temperature dependent carrier concentrations and mobilities. In this paper, the measurement system will be described, and recent results for several new materials will be presented.

原文English
頁(從 - 到)323-332
頁數10
期刊Materials Research Society Symposium - Proceedings
793
DOIs
出版狀態Published - 2003
事件Thermoelectric Materials 2003 - Research and Applications - Boston, MA., United States
持續時間: 2003 12月 12003 12月 3

All Science Journal Classification (ASJC) codes

  • 一般材料科學
  • 凝聚態物理學
  • 材料力學
  • 機械工業

指紋

深入研究「Hall effect measurements on new thermoelectric materials」主題。共同形成了獨特的指紋。

引用此