TY - JOUR
T1 - Hall effect measurements on new thermoelectric materials
AU - Short, Jarrod
AU - Loo, Sim
AU - Lal, Sangeeta
AU - Hsu, Kuei Fang
AU - Quarez, Eric
AU - Kanatzidis, Mercouri G.
AU - Hogan, Timothy P.
PY - 2003
Y1 - 2003
N2 - In the field of thermoelectrics, the figure of merit of new materials is based on the electrical conductivity, thermoelectric power, and thermal conductivity of the sample, however additional insight is gained through knowledge of the carrier concentrations and mobility in the materials. The figure of merit is commonly related to the material properties through the B factor which is directly dependent on the mobility of the carriers as well as the effective mass. To gain additional insight on the new materials of interest for thermoelectric applications, a Hall Effect system has been developed for measuring the temperature dependent carrier concentrations and mobilities. In this paper, the measurement system will be described, and recent results for several new materials will be presented.
AB - In the field of thermoelectrics, the figure of merit of new materials is based on the electrical conductivity, thermoelectric power, and thermal conductivity of the sample, however additional insight is gained through knowledge of the carrier concentrations and mobility in the materials. The figure of merit is commonly related to the material properties through the B factor which is directly dependent on the mobility of the carriers as well as the effective mass. To gain additional insight on the new materials of interest for thermoelectric applications, a Hall Effect system has been developed for measuring the temperature dependent carrier concentrations and mobilities. In this paper, the measurement system will be described, and recent results for several new materials will be presented.
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U2 - 10.1557/proc-793-s8.35
DO - 10.1557/proc-793-s8.35
M3 - Conference article
AN - SCOPUS:2442445155
SN - 0272-9172
VL - 793
SP - 323
EP - 332
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Thermoelectric Materials 2003 - Research and Applications
Y2 - 1 December 2003 through 3 December 2003
ER -