Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature

S. Gwo; C. L. Wu; C. H. Shen; W. H. Chang; T. M. Hsu; J. S. Wang; J. T. Hsu

doi:10.1063/1.1738183

Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature

S. Gwo
, C. L. Wu
, C. H. Shen
, W. H. Chang
, T. M. Hsu
, J. S. Wang
, J. T. Hsu

物理學系

研究成果: Article › 同行評審

131 引文斯高帕斯（Scopus）

摘要

The plasma-assisted molecular beam epitaxial (PA-MBE) growth of InN films using a double-buffer technique, was investigated. The heteroepitaxial growth of InN on Si(111) was conducted using a radio-frequency nitrogen plasma source at low temperature. The reflection high energy electron diffraction (RHEED), x-ray diffraction, Raman scattering and transmission electron microscopy (TEM) analysis were used for the study of the films. It was observed that the grown films showed strong near-infrared photoluminescence intensity at room temperature.

原文	English
頁（從 - 到）	3765-3767
頁數	3
期刊	Applied Physics Letters
卷	84
發行號	19
DOIs	https://doi.org/10.1063/1.1738183
出版狀態	Published - 2004 5月 10

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

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10.1063/1.1738183

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abstract = "The plasma-assisted molecular beam epitaxial (PA-MBE) growth of InN films using a double-buffer technique, was investigated. The heteroepitaxial growth of InN on Si(111) was conducted using a radio-frequency nitrogen plasma source at low temperature. The reflection high energy electron diffraction (RHEED), x-ray diffraction, Raman scattering and transmission electron microscopy (TEM) analysis were used for the study of the films. It was observed that the grown films showed strong near-infrared photoluminescence intensity at room temperature.",

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year = "2004",

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T1 - Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature

AU - Gwo, S.

AU - Wu, C. L.

AU - Shen, C. H.

AU - Chang, W. H.

AU - Hsu, T. M.

AU - Wang, J. S.

AU - Hsu, J. T.

PY - 2004/5/10

Y1 - 2004/5/10

N2 - The plasma-assisted molecular beam epitaxial (PA-MBE) growth of InN films using a double-buffer technique, was investigated. The heteroepitaxial growth of InN on Si(111) was conducted using a radio-frequency nitrogen plasma source at low temperature. The reflection high energy electron diffraction (RHEED), x-ray diffraction, Raman scattering and transmission electron microscopy (TEM) analysis were used for the study of the films. It was observed that the grown films showed strong near-infrared photoluminescence intensity at room temperature.

AB - The plasma-assisted molecular beam epitaxial (PA-MBE) growth of InN films using a double-buffer technique, was investigated. The heteroepitaxial growth of InN on Si(111) was conducted using a radio-frequency nitrogen plasma source at low temperature. The reflection high energy electron diffraction (RHEED), x-ray diffraction, Raman scattering and transmission electron microscopy (TEM) analysis were used for the study of the films. It was observed that the grown films showed strong near-infrared photoluminescence intensity at room temperature.

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UR - https://www.scopus.com/pages/publications/2942601794#tab=citedBy

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M3 - Article

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SN - 0003-6951

VL - 84

SP - 3765

EP - 3767

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature

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