TY - JOUR
T1 - Heteroepitaxial nucleation and growth of graphene nanowalls on silicon
AU - Tu, Chia Hao
AU - Chen, Waileong
AU - Fang, Hsin Chiao
AU - Tzeng, Yonhua
AU - Liu, Chuan Pu
N1 - Funding Information:
The authors would like to thank Orlando H. Auceillo, Yuzi Liu, and Mengchun Pan for useful opinions, the Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan, for access to equipment and technical support, and the NSC Core Facililies Laboratory for Nano-Science and Nano-Technology in the Kaohsiung-Pintung Area. This work was supported in part by the National Science Council of Taiwan (Grant Nos. NSC-100-2221-E-006-169-MY3 , 101-2221-E-006-140-MY3 , 100-2120-M-006-001 and 101-2911-I-006-517 ) and Ministry of Education, Taiwan . Use of the Center for Nanoscale Materials was supported by the US Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. The electron microscopy was accomplished at the Electron Microscopy Center for Materials Research at Argonne National Laboratory, a US Department of Energy Office of Science Laboratory operated under Contract No. DE-AC02-06CH11357 by UChicago Argonne, LLC.
PY - 2013/4
Y1 - 2013/4
N2 - Heteroepitaxial nucleation of {0 0 2} graphene sheets on {1 1 1} facets of plasma treated (1 0 0) silicon by direct-current plasma enhanced chemical vapor deposition in methane-hydrogen gas mixtures is confirmed by high-resolution transmission electron microscopy. Lattice mismatch by 12% is compensated by tilting the graphene {0 0 2} with respect to silicon {1 1 1} and matching the silicon lattice with fewer graphene layers. The interlayer spacing of graphene sheets near the silicon surface is 0.355 nm, which is larger than that of AB stacked graphite and confirmed as AA stacked graphitic phase. Subsequent growth of standing graphene nanowalls is characterized by scanning electron microscopy and Raman scattering (633 and 514 nm excitation). The Raman peaks of D-band, G-band, and 2D-band are discussed in correlation with SEM images of graphene nanowalls. A strong Raman peak corresponding to silicon-hydrogen stretch vibration is detected by 633 nm excitation at the early stage of graphene nucleation, indicating the silicon substrate etched by hydrogen plasma. With these analyses, the growth mechanism is also proposed in this paper.
AB - Heteroepitaxial nucleation of {0 0 2} graphene sheets on {1 1 1} facets of plasma treated (1 0 0) silicon by direct-current plasma enhanced chemical vapor deposition in methane-hydrogen gas mixtures is confirmed by high-resolution transmission electron microscopy. Lattice mismatch by 12% is compensated by tilting the graphene {0 0 2} with respect to silicon {1 1 1} and matching the silicon lattice with fewer graphene layers. The interlayer spacing of graphene sheets near the silicon surface is 0.355 nm, which is larger than that of AB stacked graphite and confirmed as AA stacked graphitic phase. Subsequent growth of standing graphene nanowalls is characterized by scanning electron microscopy and Raman scattering (633 and 514 nm excitation). The Raman peaks of D-band, G-band, and 2D-band are discussed in correlation with SEM images of graphene nanowalls. A strong Raman peak corresponding to silicon-hydrogen stretch vibration is detected by 633 nm excitation at the early stage of graphene nucleation, indicating the silicon substrate etched by hydrogen plasma. With these analyses, the growth mechanism is also proposed in this paper.
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U2 - 10.1016/j.carbon.2012.11.034
DO - 10.1016/j.carbon.2012.11.034
M3 - Article
AN - SCOPUS:84872832356
SN - 0008-6223
VL - 54
SP - 234
EP - 240
JO - Carbon
JF - Carbon
ER -