Heteroepitaxy of GaN on Si(111) realized with a coincident-interface AlN/ β-Si3N4(0001) double-buffer structure

Chung Lin Wu, Jhih Chun Wang, Meng Hsuan Chan, Tom T. Chen, Shangjr Gwo

研究成果: Article

68 引文 斯高帕斯(Scopus)

摘要

AlN(0001), β-Si3N4(0001) and Si(111) were studied and found to form coincident lattices at the interfaces. In addition, an ultrathin (∼1.5 nm) β-Si3N4 interlayer was demonstrated to be very effective in blocking Si/Al interdiffusion during the growth of III-nitrides on Si(111). Both factors contribute to the high epitaxial quality of GaN films grown on Si(111) using AlN/β-Si3N4 bilayer buffer.

原文English
頁(從 - 到)4530-4532
頁數3
期刊Applied Physics Letters
83
發行號22
DOIs
出版狀態Published - 2003 十二月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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