Heterojunction bipolar transistor with zero conduction band discontinuity cross-reference to related application

貢獻的翻譯標題: 具零導電帶不連續值之磷化鎵銦/砷化鎵鋁/砷化鎵異質接面雙極性電晶體

Wen-Chau Liu (Inventor)

研究成果: Patent

摘要

A bipolar heterojunction transistor (HBT) includes a collector layer, a base layer formed on the collector layer, a first transition layer formed on the base layer, an emitter layer formed on the first transition layer, a second transition layer formed on the emitter layer, and an emitter cap layer formed on the second transition layer. Each of the first and second transition layers is formed of a composition that contains an element, the mole fraction of which is graded in such a manner that the conduction band of the HBT is continuous through the base layer, the first and second transition layers, the emitter layer and the emitter cap layer.
原文English
專利號6791126
出版狀態Published - 2003 十二月 4

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