Heterojunction bipolar transistor with zero conduction band discontinuity cross-reference to related application

貢獻的翻譯標題: 具零導電帶不連續值之磷化鎵銦/砷化鎵鋁/砷化鎵異質接面雙極性電晶體

Wen-Chau Liu (Inventor)

研究成果: Patent


A bipolar heterojunction transistor (HBT) includes a collector layer, a base layer formed on the collector layer, a first transition layer formed on the base layer, an emitter layer formed on the first transition layer, a second transition layer formed on the emitter layer, and an emitter cap layer formed on the second transition layer. Each of the first and second transition layers is formed of a composition that contains an element, the mole fraction of which is graded in such a manner that the conduction band of the HBT is continuous through the base layer, the first and second transition layers, the emitter layer and the emitter cap layer.
出版狀態Published - 2003 十二月 4