TY - JOUR
T1 - Heterostructure confinement effect on the negative-differential-resistance (ndr) bipolar transistor
AU - Liu, Wen Chau
AU - Tsai, Jun Hui
AU - Laih, Lih Wen
AU - Cheng-Zu,
AU - Thei, Kong Beng
AU - Lour, Wen Shiung
AU - Guo, Der Feng
PY - 1995/6
Y1 - 1995/6
N2 - We review the current investigation of heterostructure-emitter bipolar transistors (HEBT) and pay attention to confinement effects on the common-emitter current gain and the occurrence of negative-differential resistance (NDR). Three main devices with different heterostructure emitters have been grown and discussed. These devices include single-(SHEBT), double-(DHEBT), and resonant tunneling-(RT-HEBT) structure with Al0.5Ga0.5As/500Å-GaAs, Al0.5Ga0.5As/500Å-GaAs and 5-period 50Å-Al0.5Ga0.5As/50Å-GaAs superlattic emitters, respectively. With respect to current gain, it is found that Al0.5Ga0.5As/500Å-GaAs gives the best confinement effect on hole minority carriers We obtain common-emitter current gains of 180, 18, and 65 for the SHEBT, DHEBT and RT-HEBT, respectively. Besides, all of the studied devices exhibit an interesting S-shaped negative-differential resistance (NDR) resulting from the regenerative switching process. With respect to NDR performance, the Al0.5Ga0.5As/500Å-GaAs, shows the best confinement effect on the ionized electrons. The controlled voltage efficiencies are 1.43, 1.77, and 1.12 for SHEBT, DHEBT, and RT-HEBT, respectively.
AB - We review the current investigation of heterostructure-emitter bipolar transistors (HEBT) and pay attention to confinement effects on the common-emitter current gain and the occurrence of negative-differential resistance (NDR). Three main devices with different heterostructure emitters have been grown and discussed. These devices include single-(SHEBT), double-(DHEBT), and resonant tunneling-(RT-HEBT) structure with Al0.5Ga0.5As/500Å-GaAs, Al0.5Ga0.5As/500Å-GaAs and 5-period 50Å-Al0.5Ga0.5As/50Å-GaAs superlattic emitters, respectively. With respect to current gain, it is found that Al0.5Ga0.5As/500Å-GaAs gives the best confinement effect on hole minority carriers We obtain common-emitter current gains of 180, 18, and 65 for the SHEBT, DHEBT and RT-HEBT, respectively. Besides, all of the studied devices exhibit an interesting S-shaped negative-differential resistance (NDR) resulting from the regenerative switching process. With respect to NDR performance, the Al0.5Ga0.5As/500Å-GaAs, shows the best confinement effect on the ionized electrons. The controlled voltage efficiencies are 1.43, 1.77, and 1.12 for SHEBT, DHEBT, and RT-HEBT, respectively.
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U2 - 10.1006/spmi.1995.1078
DO - 10.1006/spmi.1995.1078
M3 - Article
AN - SCOPUS:0029513024
SN - 0749-6036
VL - 17
SP - 445
EP - 456
JO - Superlattices and Microstructures
JF - Superlattices and Microstructures
IS - 4
ER -