Heterostructure-emitter and pseudomorphic base transistor (HEPBT) with a graded Al_xGa_1-xAs confinement layer

Engineering & Materials Science

• Heterojunctions 73%
• Transistors 48%
• Heterojunction bipolar transistors 44%
• Semiconductor quantum wells 29%
• Bipolar transistors 23%
• Networks (circuits) 10%
• Electric potential 9%

Physics & Astronomy

• emitters 46%
• transistors 44%
• bipolar transistors 30%
• heterojunctions 16%
• low voltage 9%
• insertion 9%
• aluminum gallium arsenides 8%
• quantum wells 7%

Chemical Compounds

• Current Gain 100%
• Voltage 40%