HfSiON n-MOSFETs using low-work function HfSiχ gate

C. H. Wu, B. F. Hung, A. Chin, S. J. Wang, F. Y. Yen, Y. T. Hou, Y. Jin, H. J. Tao, S. C. Chen, M. S. Liang

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

The authors have developed a novel high-temperature stable HfSiχgate for high-κ HfSiON gate dielectric. After a 1000 °C RTA, the HfSiχ/HfSiON devices showed an effective work function of 4.27 eV and a peak electron mobility of 216 cm2/V · s at 1.6-nm equivalent oxide thickness, with additional merit of a process compatible with current very large scale integration fabrication lines.

原文English
頁(從 - 到)762-764
頁數3
期刊IEEE Electron Device Letters
27
發行號9
DOIs
出版狀態Published - 2006 九月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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