High-barrier gate and tri-step doped channel transistor

W. C. Liu; H. J. Pan; W. L. Chang; K. H. Yu; S. C. Feng; J. H. Yan

High-barrier gate and tri-step doped channel transistor

W. C. Liu, H. J. Pan, W. L. Chang, K. H. Yu, S. C. Feng, J. H. Yan

微電子工程研究所

研究成果: Paper › 同行評審

摘要

A new GaInP/GaAs high-barrier gate and tri-step doped channel heterostructure field-effect transistor (HFET) has been successfully fabricated and demonstrated. A very thin and heavily doped δ(p⁺)-GaInP layer is introduced to increase the high gate turn-on and breakdown voltage and reduce the gate leakage current. A low-medium-high tri-step doped channel structure is used to improve the output current drivability and average transconductance. In addition, a metal-semiconductor field-effect transistor (MESFET) with the same tri-step doped channel structure has also been fabricated for comparison. The studied devices show the good performances of high breakdown voltage, high output drain saturation current and flat and wide transconductance operation regimes. The measured cut-off frequency (f_T) is higher than 15 GHz. From experimental results, the studied devices show good potential in high-power and large input signal circuit applications.

原文	English
頁面	454-456
頁數	3
出版狀態	Published - 1999
事件	Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust 持續時間: 1998 12月 14 → 1998 12月 16

Other

Other	Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices
城市	Perth, WA, Aust
期間	98-12-14 → 98-12-16

All Science Journal Classification (ASJC) codes

電子、光磁材料

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引用此

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title = "High-barrier gate and tri-step doped channel transistor",

abstract = "A new GaInP/GaAs high-barrier gate and tri-step doped channel heterostructure field-effect transistor (HFET) has been successfully fabricated and demonstrated. A very thin and heavily doped δ(p+)-GaInP layer is introduced to increase the high gate turn-on and breakdown voltage and reduce the gate leakage current. A low-medium-high tri-step doped channel structure is used to improve the output current drivability and average transconductance. In addition, a metal-semiconductor field-effect transistor (MESFET) with the same tri-step doped channel structure has also been fabricated for comparison. The studied devices show the good performances of high breakdown voltage, high output drain saturation current and flat and wide transconductance operation regimes. The measured cut-off frequency (fT) is higher than 15 GHz. From experimental results, the studied devices show good potential in high-power and large input signal circuit applications.",

author = "Liu, {W. C.} and Pan, {H. J.} and Chang, {W. L.} and Yu, {K. H.} and Feng, {S. C.} and Yan, {J. H.}",

note = "Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.; Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices ; Conference date: 14-12-1998 Through 16-12-1998",

year = "1999",

language = "English",

pages = "454--456",

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TY - CONF

T1 - High-barrier gate and tri-step doped channel transistor

AU - Liu, W. C.

AU - Pan, H. J.

AU - Chang, W. L.

AU - Yu, K. H.

AU - Feng, S. C.

AU - Yan, J. H.

PY - 1999

Y1 - 1999

N2 - A new GaInP/GaAs high-barrier gate and tri-step doped channel heterostructure field-effect transistor (HFET) has been successfully fabricated and demonstrated. A very thin and heavily doped δ(p+)-GaInP layer is introduced to increase the high gate turn-on and breakdown voltage and reduce the gate leakage current. A low-medium-high tri-step doped channel structure is used to improve the output current drivability and average transconductance. In addition, a metal-semiconductor field-effect transistor (MESFET) with the same tri-step doped channel structure has also been fabricated for comparison. The studied devices show the good performances of high breakdown voltage, high output drain saturation current and flat and wide transconductance operation regimes. The measured cut-off frequency (fT) is higher than 15 GHz. From experimental results, the studied devices show good potential in high-power and large input signal circuit applications.

AB - A new GaInP/GaAs high-barrier gate and tri-step doped channel heterostructure field-effect transistor (HFET) has been successfully fabricated and demonstrated. A very thin and heavily doped δ(p+)-GaInP layer is introduced to increase the high gate turn-on and breakdown voltage and reduce the gate leakage current. A low-medium-high tri-step doped channel structure is used to improve the output current drivability and average transconductance. In addition, a metal-semiconductor field-effect transistor (MESFET) with the same tri-step doped channel structure has also been fabricated for comparison. The studied devices show the good performances of high breakdown voltage, high output drain saturation current and flat and wide transconductance operation regimes. The measured cut-off frequency (fT) is higher than 15 GHz. From experimental results, the studied devices show good potential in high-power and large input signal circuit applications.

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T2 - Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices

Y2 - 14 December 1998 through 16 December 1998

ER -

High-barrier gate and tri-step doped channel transistor

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