High-barrier gate and tri-step doped channel transistor

Wen-Chau Liu, H. J. Pan, W. L. Chang, K. H. Yu, S. C. Feng, J. H. Yan

研究成果: Paper

摘要

A new GaInP/GaAs high-barrier gate and tri-step doped channel heterostructure field-effect transistor (HFET) has been successfully fabricated and demonstrated. A very thin and heavily doped δ(p + )-GaInP layer is introduced to increase the high gate turn-on and breakdown voltage and reduce the gate leakage current. A low-medium-high tri-step doped channel structure is used to improve the output current drivability and average transconductance. In addition, a metal-semiconductor field-effect transistor (MESFET) with the same tri-step doped channel structure has also been fabricated for comparison. The studied devices show the good performances of high breakdown voltage, high output drain saturation current and flat and wide transconductance operation regimes. The measured cut-off frequency (f T ) is higher than 15 GHz. From experimental results, the studied devices show good potential in high-power and large input signal circuit applications.

原文English
頁面454-456
頁數3
出版狀態Published - 1999 一月 1
事件Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust
持續時間: 1998 十二月 141998 十二月 16

Other

OtherProceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices
城市Perth, WA, Aust
期間98-12-1498-12-16

指紋

Transconductance
Electric breakdown
Transistors
MESFET devices
Gates (transistor)
Cutoff frequency
High electron mobility transistors
Leakage currents
Networks (circuits)
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

引用此文

Liu, W-C., Pan, H. J., Chang, W. L., Yu, K. H., Feng, S. C., & Yan, J. H. (1999). High-barrier gate and tri-step doped channel transistor. 454-456. 論文發表於 Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, .
Liu, Wen-Chau ; Pan, H. J. ; Chang, W. L. ; Yu, K. H. ; Feng, S. C. ; Yan, J. H. / High-barrier gate and tri-step doped channel transistor. 論文發表於 Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, .3 p.
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abstract = "A new GaInP/GaAs high-barrier gate and tri-step doped channel heterostructure field-effect transistor (HFET) has been successfully fabricated and demonstrated. A very thin and heavily doped δ(p + )-GaInP layer is introduced to increase the high gate turn-on and breakdown voltage and reduce the gate leakage current. A low-medium-high tri-step doped channel structure is used to improve the output current drivability and average transconductance. In addition, a metal-semiconductor field-effect transistor (MESFET) with the same tri-step doped channel structure has also been fabricated for comparison. The studied devices show the good performances of high breakdown voltage, high output drain saturation current and flat and wide transconductance operation regimes. The measured cut-off frequency (f T ) is higher than 15 GHz. From experimental results, the studied devices show good potential in high-power and large input signal circuit applications.",
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Liu, W-C, Pan, HJ, Chang, WL, Yu, KH, Feng, SC & Yan, JH 1999, 'High-barrier gate and tri-step doped channel transistor', 論文發表於 Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, 98-12-14 - 98-12-16 頁 454-456.

High-barrier gate and tri-step doped channel transistor. / Liu, Wen-Chau; Pan, H. J.; Chang, W. L.; Yu, K. H.; Feng, S. C.; Yan, J. H.

1999. 454-456 論文發表於 Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, .

研究成果: Paper

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AU - Feng, S. C.

AU - Yan, J. H.

PY - 1999/1/1

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N2 - A new GaInP/GaAs high-barrier gate and tri-step doped channel heterostructure field-effect transistor (HFET) has been successfully fabricated and demonstrated. A very thin and heavily doped δ(p + )-GaInP layer is introduced to increase the high gate turn-on and breakdown voltage and reduce the gate leakage current. A low-medium-high tri-step doped channel structure is used to improve the output current drivability and average transconductance. In addition, a metal-semiconductor field-effect transistor (MESFET) with the same tri-step doped channel structure has also been fabricated for comparison. The studied devices show the good performances of high breakdown voltage, high output drain saturation current and flat and wide transconductance operation regimes. The measured cut-off frequency (f T ) is higher than 15 GHz. From experimental results, the studied devices show good potential in high-power and large input signal circuit applications.

AB - A new GaInP/GaAs high-barrier gate and tri-step doped channel heterostructure field-effect transistor (HFET) has been successfully fabricated and demonstrated. A very thin and heavily doped δ(p + )-GaInP layer is introduced to increase the high gate turn-on and breakdown voltage and reduce the gate leakage current. A low-medium-high tri-step doped channel structure is used to improve the output current drivability and average transconductance. In addition, a metal-semiconductor field-effect transistor (MESFET) with the same tri-step doped channel structure has also been fabricated for comparison. The studied devices show the good performances of high breakdown voltage, high output drain saturation current and flat and wide transconductance operation regimes. The measured cut-off frequency (f T ) is higher than 15 GHz. From experimental results, the studied devices show good potential in high-power and large input signal circuit applications.

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Liu W-C, Pan HJ, Chang WL, Yu KH, Feng SC, Yan JH. High-barrier gate and tri-step doped channel transistor. 1999. 論文發表於 Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, .