High barrier height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal

W. C. Lai, M. Yokoyama, C. Y. Chang, J. D. Guo, J. S. Tsang, S. H. Chan, S. M. Sze

研究成果: Conference article同行評審

摘要

Copper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system. The barrier height was determined to be as high as ΦB = 1.13eV by current-voltage (I-V) method and corrected to be ΦB = 1.35eV as considered the ideality factor, n, with the value of 1.2. By the capacitance-voltage (C-V) method, the barrier height is determined to be ΦB = 1.41eV. Both results indicate that the sputtered copper metal is a high barrier height Schottky metal for n-type GaN.

原文English
頁(從 - 到)523-528
頁數6
期刊Materials Research Society Symposium - Proceedings
572
DOIs
出版狀態Published - 1999
事件Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications' - San Francisco, CA, USA
持續時間: 1999 四月 51999 四月 8

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業

指紋

深入研究「High barrier height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal」主題。共同形成了獨特的指紋。

引用此