Copper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system. The barrier height was determined to be as high as ΦB = 1.13eV by current-voltage (I-V) method and corrected to be ΦB = 1.35eV as considered the ideality factor, n, with the value of 1.2. By the capacitance-voltage (C-V) method, the barrier height is determined to be ΦB = 1.41eV. Both results indicate that the sputtered copper metal is a high barrier height Schottky metal for n-type GaN.
|頁（從 - 到）||523-528|
|期刊||Materials Research Society Symposium - Proceedings|
|出版狀態||Published - 1999|
|事件||Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications' - San Francisco, CA, USA|
持續時間: 1999 四月 5 → 1999 四月 8
All Science Journal Classification (ASJC) codes