High barrier height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal

W. C. Lai; M. Yokoyama; C. Y. Chang; J. D. Guo; J. S. Tsang; S. H. Chan; S. M. Sze

doi:10.1557/proc-572-523

High barrier height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal

W. C. Lai, M. Yokoyama, C. Y. Chang, J. D. Guo, J. S. Tsang, S. H. Chan, S. M. Sze

光電科學與工程學系

研究成果: Conference article › 同行評審

摘要

Copper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system. The barrier height was determined to be as high as Φ_B = 1.13eV by current-voltage (I-V) method and corrected to be Φ_B = 1.35eV as considered the ideality factor, n, with the value of 1.2. By the capacitance-voltage (C-V) method, the barrier height is determined to be Φ_B = 1.41eV. Both results indicate that the sputtered copper metal is a high barrier height Schottky metal for n-type GaN.

原文	English
頁（從 - 到）	523-528
頁數	6
期刊	Materials Research Society Symposium - Proceedings
卷	572
DOIs	https://doi.org/10.1557/proc-572-523
出版狀態	Published - 1999
事件	Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications' - San Francisco, CA, USA 持續時間: 1999 4月 5 → 1999 4月 8

All Science Journal Classification (ASJC) codes

一般材料科學
凝聚態物理學
材料力學
機械工業

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@article{2508332f3e95457685a5b73da27bd1b2,

title = "High barrier height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal",

abstract = "Copper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system. The barrier height was determined to be as high as ΦB = 1.13eV by current-voltage (I-V) method and corrected to be ΦB = 1.35eV as considered the ideality factor, n, with the value of 1.2. By the capacitance-voltage (C-V) method, the barrier height is determined to be ΦB = 1.41eV. Both results indicate that the sputtered copper metal is a high barrier height Schottky metal for n-type GaN.",

author = "Lai, {W. C.} and M. Yokoyama and Chang, {C. Y.} and Guo, {J. D.} and Tsang, {J. S.} and Chan, {S. H.} and Sze, {S. M.}",

year = "1999",

doi = "10.1557/proc-572-523",

language = "English",

volume = "572",

pages = "523--528",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications' ; Conference date: 05-04-1999 Through 08-04-1999",

}

TY - JOUR

T1 - High barrier height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal

AU - Lai, W. C.

AU - Yokoyama, M.

AU - Chang, C. Y.

AU - Guo, J. D.

AU - Tsang, J. S.

AU - Chan, S. H.

AU - Sze, S. M.

PY - 1999

Y1 - 1999

N2 - Copper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system. The barrier height was determined to be as high as ΦB = 1.13eV by current-voltage (I-V) method and corrected to be ΦB = 1.35eV as considered the ideality factor, n, with the value of 1.2. By the capacitance-voltage (C-V) method, the barrier height is determined to be ΦB = 1.41eV. Both results indicate that the sputtered copper metal is a high barrier height Schottky metal for n-type GaN.

AB - Copper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system. The barrier height was determined to be as high as ΦB = 1.13eV by current-voltage (I-V) method and corrected to be ΦB = 1.35eV as considered the ideality factor, n, with the value of 1.2. By the capacitance-voltage (C-V) method, the barrier height is determined to be ΦB = 1.41eV. Both results indicate that the sputtered copper metal is a high barrier height Schottky metal for n-type GaN.

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U2 - 10.1557/proc-572-523

DO - 10.1557/proc-572-523

M3 - Conference article

AN - SCOPUS:0033337825

SN - 0272-9172

VL - 572

SP - 523

EP - 528

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications'

Y2 - 5 April 1999 through 8 April 1999

ER -

High barrier height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal

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