High-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic HEMT

Wen-Chau Liu; W. L. Chang; J. Y. Chen; K. H. Yu; S. C. Feng; J. H. Yan

High-breakdown and high-linearity Ga_0.51In_0.49P/In_0.15Ga_0.85As pseudomorphic HEMT

Wen-Chau Liu, W. L. Chang, J. Y. Chen, K. H. Yu, S. C. Feng, J. H. Yan

研究成果: Paper › 同行評審

摘要

High-breakdown and high-linearity Ga_0.51In_0.49P/In_0.15Ga_0.85As pseudomorphic HEMT's have been fabricated successfully and demonstrated. A extremely high gate-to-drain breakdown voltage of 40 V is obtained by using a wide-gap Ga_0.51In_0.49P Schottky contact layer. For a 1 μm-gate length device, the transconductance and output current density at room temperature are 90 mS/mm and 646 mA/mm, respectively. The measured f_T and f_max are 12 and 28.4 GHz, respectively. Therefore, the studied device shows a promise for microwave power applications.

原文	English
頁面	457-459
頁數	3
出版狀態	Published - 1999 1月 1
事件	Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust 持續時間: 1998 12月 14 → 1998 12月 16

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Other	Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices
城市	Perth, WA, Aust
期間	98-12-14 → 98-12-16

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@conference{73efaeda9861454b94894a6498d1be92,

title = "High-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic HEMT",

abstract = "High-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic HEMT's have been fabricated successfully and demonstrated. A extremely high gate-to-drain breakdown voltage of 40 V is obtained by using a wide-gap Ga0.51In0.49P Schottky contact layer. For a 1 μm-gate length device, the transconductance and output current density at room temperature are 90 mS/mm and 646 mA/mm, respectively. The measured fT and fmax are 12 and 28.4 GHz, respectively. Therefore, the studied device shows a promise for microwave power applications.",

author = "Wen-Chau Liu and Chang, {W. L.} and Chen, {J. Y.} and Yu, {K. H.} and Feng, {S. C.} and Yan, {J. H.}",

year = "1999",

month = jan,

day = "1",

language = "English",

pages = "457--459",

note = "Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices ; Conference date: 14-12-1998 Through 16-12-1998",

}

TY - CONF

T1 - High-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic HEMT

AU - Liu, Wen-Chau

AU - Chang, W. L.

AU - Chen, J. Y.

AU - Yu, K. H.

AU - Feng, S. C.

AU - Yan, J. H.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - High-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic HEMT's have been fabricated successfully and demonstrated. A extremely high gate-to-drain breakdown voltage of 40 V is obtained by using a wide-gap Ga0.51In0.49P Schottky contact layer. For a 1 μm-gate length device, the transconductance and output current density at room temperature are 90 mS/mm and 646 mA/mm, respectively. The measured fT and fmax are 12 and 28.4 GHz, respectively. Therefore, the studied device shows a promise for microwave power applications.

AB - High-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic HEMT's have been fabricated successfully and demonstrated. A extremely high gate-to-drain breakdown voltage of 40 V is obtained by using a wide-gap Ga0.51In0.49P Schottky contact layer. For a 1 μm-gate length device, the transconductance and output current density at room temperature are 90 mS/mm and 646 mA/mm, respectively. The measured fT and fmax are 12 and 28.4 GHz, respectively. Therefore, the studied device shows a promise for microwave power applications.

UR - http://www.scopus.com/inward/record.url?scp=0032646425&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032646425&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0032646425

SP - 457

EP - 459

T2 - Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices

Y2 - 14 December 1998 through 16 December 1998

ER -

High-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic HEMT

摘要

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High-breakdown and high-linearity Ga_0.51In_0.49P/In_0.15Ga_0.85As pseudomorphic HEMT