High-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic HEMT's have been fabricated successfully and demonstrated. A extremely high gate-to-drain breakdown voltage of 40 V is obtained by using a wide-gap Ga0.51In0.49P Schottky contact layer. For a 1 μm-gate length device, the transconductance and output current density at room temperature are 90 mS/mm and 646 mA/mm, respectively. The measured fT and fmax are 12 and 28.4 GHz, respectively. Therefore, the studied device shows a promise for microwave power applications.
|出版狀態||Published - 1999 1月 1|
|事件||Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust|
持續時間: 1998 12月 14 → 1998 12月 16
|Other||Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices|
|城市||Perth, WA, Aust|
|期間||98-12-14 → 98-12-16|
All Science Journal Classification (ASJC) codes