High-breakdown and high-linearity Ga(0.51)In(0.49P)/In(0.15)Ga(0.85)As Pseudomorphic HEMT's Prepared by Selectively Removing Mesa Sidewalls

Wen-Chau Liu, W. L. Chang, H. J. Pan, W. C. Wang, J. Y. Chen, K. H. Yu, S. C. Feng

研究成果: Conference contribution

摘要

High-breakdown and high-linearity Ga0.5lIn0.49P Ilno. 15Ga0.8sAs pseudomorphic high electron mobility transistors (PHEMT's) have been successfully fabricated and demonstrated in both dc and ac performance. Together with a wide-gap Ga0.51In0.49P gate-insulator, a gate-to-drain breakdown voltage of 33 V is. further improved to over 40 V by selectively removing mesa sidewalls. The transconductance and output current density of a 1 ×100 μm2 device at room temperature (77 K) are 90 (J 20) mSlmm and 646 (780) mAlmm, respectively. In addition to the broad-plateau gm vs. IDS profile for the fabricated device, the associated fr and fmax vs. IDS profiles are also wide andflat. The measured frand fmax of 12 and 28.4 GHz are obtained, respectively.

原文English
主出版物標題ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference
編輯R.P. Mertens, H. Grunbacher, H.E. Maes, G. Declerck
發行者IEEE Computer Society
頁面552-555
頁數4
ISBN(電子)2863322451, 9782863322451
出版狀態Published - 1999 1月 1
事件29th European Solid-State Device Research Conference, ESSDERC 1999 - Leuven, Belgium
持續時間: 1999 9月 131999 9月 15

出版系列

名字European Solid-State Device Research Conference
13-15 Sept. 1999
ISSN(列印)1930-8876

Other

Other29th European Solid-State Device Research Conference, ESSDERC 1999
國家/地區Belgium
城市Leuven
期間99-09-1399-09-15

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 安全、風險、可靠性和品質

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