High-breakdown and high-linearity Ga(0.51)In(0.49P)/In(0.15)Ga(0.85)As Pseudomorphic HEMT's Prepared by Selectively Removing Mesa Sidewalls

Wen-Chau Liu, W. L. Chang, H. J. Pan, W. C. Wang, J. Y. Chen, K. H. Yu, S. C. Feng

研究成果: Conference contribution

指紋

深入研究「High-breakdown and high-linearity Ga(0.51)In(0.49P)/In(0.15)Ga(0.85)As Pseudomorphic HEMT's Prepared by Selectively Removing Mesa Sidewalls」主題。共同形成了獨特的指紋。

Engineering & Materials Science