High breakdown n+-GaAs/δ(p+)-GaInP/n-GaAs heterojunction camel-gate FET grown by LP-MOCVD

W. C. Liu, W. L. Chang, H. J. Pan, J. Y. Chen, W. C. Wang, K. H. Yu, S. C. Feng

研究成果: Conference article同行評審

摘要

This paper reports on the characteristics of n+-GaAs/δ(p+)-GaInP/n-GaAs camel-gate heterojunction field-effect transistor (CAMFET) with the triple-step doped-channel. Due to the newly designed structure, the measured gate-drain turn-on and breakdown voltages are as high as 1.6 and 40 V for a fabricated 1 × 100 μm2 device, respectively. Furthermore, the measured maximum transconductance is 145 mS/mm with the current gain cut-off frequency fτ of 17 GHz and the maximum oscillation frequency fmax of 33 GHz, respectively. Based on excellent device characteristics, the studied device shows a promise for circuit applications.

原文English
頁(從 - 到)Pr8-1171 - Pr8-1177
期刊Journal De Physique. IV : JP
9 pt 2
發行號8
出版狀態Published - 1999 9月
事件Proceedings of the 1999 12th European Conference on Chemical Vapour Deposition ((EUROCVD12) - Barcelona, Spain
持續時間: 1999 9月 51999 9月 10

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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