High breakdown voltage symmetric double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor

Y. S. Lin, W. C. Hsu, C. H. Wu, W. Lin, R. T. Hsu

研究成果: Article同行評審

18 引文 斯高帕斯(Scopus)

摘要

A substantial enhancement of breakdown voltage without sacrificing the current drive capability of the double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor (DD-HEMT) was demonstrated. Moreover, the high turn-on voltage in the proposed structure allows a large induced current level in the channel and enhances device power handling capability. The proposed DD-HEMT is very suitable for high-power application.

原文English
頁(從 - 到)1616-1618
頁數3
期刊Applied Physics Letters
75
發行號11
DOIs
出版狀態Published - 1999 九月 13

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

指紋

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