TY - JOUR
T1 - High brightness GaN-based light-emitting diodes
AU - Lee, Ya Ju
AU - Lu, Tien Chang
AU - Kuo, Hao Chung
AU - Wang, Shing Chung
PY - 2007/6
Y1 - 2007/6
N2 - This paper reviews our recent progress of GaN-based high brightness light-emitting diodes (LEDs). Firstly, by adopting chemical wet etching patterned sapphire substrates in GaN-based LEDs, not only could increase the extraction quantum efficiency, but also improve the internal quantum efficiency. Secondly, we present a high light-extraction 465-nm GaN-based vertical light-emitting diode structure with double diffuse surfaces. The external quantum efficiency was demonstrated to be about 40%. The high performance LED was achieved mainly due to the strong guided-light scattering efficiency while employing double diffuse surfaces.
AB - This paper reviews our recent progress of GaN-based high brightness light-emitting diodes (LEDs). Firstly, by adopting chemical wet etching patterned sapphire substrates in GaN-based LEDs, not only could increase the extraction quantum efficiency, but also improve the internal quantum efficiency. Secondly, we present a high light-extraction 465-nm GaN-based vertical light-emitting diode structure with double diffuse surfaces. The external quantum efficiency was demonstrated to be about 40%. The high performance LED was achieved mainly due to the strong guided-light scattering efficiency while employing double diffuse surfaces.
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U2 - 10.1109/JDT.2007.894380
DO - 10.1109/JDT.2007.894380
M3 - Article
AN - SCOPUS:34249305526
SN - 1551-319X
VL - 3
SP - 118
EP - 125
JO - IEEE/OSA Journal of Display Technology
JF - IEEE/OSA Journal of Display Technology
IS - 2
ER -