High brightness green light emitting diodes with charge asymmetric resonance tunneling structure

C. H. Chen, Y. K. Su, S. J. Chang, G. C. Chi, J. K. Sheu, J. F. Chen, C. H. Liu, Y. H. Liaw

研究成果: Article同行評審

58 引文 斯高帕斯(Scopus)

摘要

In this work, we have applied the so called charge asymmetric resonance tunneling (CART) structure to nitride-based green light emitting diode (LED). From our CART LED, we observed an abrupt turn-on voltage near 2.2 V, and the forward voltage is around 3.2 V at 20 mA injection current. At 20 mA. the output power, and external quantum efficiency of the CART LED are about 4 mW, and 6.25%, respectively. The high brightness and efficiency green LED can be obtained by using the CART structure.

原文English
頁(從 - 到)130-132
頁數3
期刊IEEE Electron Device Letters
23
發行號3
DOIs
出版狀態Published - 2002 三月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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