@article{ae86b1f2658d4605bb6dd49da564cd11,
title = "High-brightness InGaN-GaN power flip-chip LEDs",
abstract = "We report the fabrication of InGaN-GaN power flip-chip (FC) light-emitting diodes (LEDs) with a roughened sapphire backside surface prepared by grinding. It was found that we can increase output power of the FC LED by about 35% by roughening the backside surface of the sapphire substrate. The reliability of the proposed device was also better, as compared to power FC LEDs with a conventional flat sapphire backside surface.",
author = "Chang, {Shoou Jinn} and Chen, {W. S.} and Shei, {S. C.} and Kuo, {C. T.} and Ko, {Tsun Kai} and Shen, {C. F.} and Tsai, {Jimmy M.} and Lai, {Wei Chi} and Sheu, {Jinn Kong} and Lin, {A. J.}",
note = "Funding Information: Manuscript received July 13, 2008; revised September 06, 2008. First published April 14, 2009; current version published June 24, 2009. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan (D97-2700) and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education.",
year = "2009",
month = jun,
day = "15",
doi = "10.1109/JLT.2008.2005849",
language = "English",
volume = "27",
pages = "1985--1989",
journal = "Journal of Lightwave Technology",
issn = "0733-8724",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",
}