High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode

C. S. Chang, Shoou-Jinn Chang, Y. K. Su, Wei-Chi Lai, C. H. Kuo, C. K. Wang, Yu-Cheng Lin, Y. P. Hsu, S. C. Shei, H. M. Lo, J. C. Ke, Jinn-Kong Sheu

研究成果: Conference article

3 引文 斯高帕斯(Scopus)

摘要

The n+-InGaN/GaN short-period-superlattice (SPS) structures were applied on nitride-based blue light emitting diodes (LEDs) as tunneling layers. The ITO films combined with the n+-InGaN SPS tunneling layer could provide us an extremely high transparency (i.e. 93% at 465 nm) and a reasonably small 1.4 × 10-3 Ω cm2 specific contact resistance. The 20 mA forward voltage of the LED with ITO on n+-SPS upper contact was slightly higher than that of the LED with Ni/Au on n +-SPS upper contact, however, a 8.4 mW larger output power and 13.9% external quantum efficiency (Q.E.) could be obtained by using such an ITO on n+-SPS upper contact.

原文English
頁(從 - 到)2227-2231
頁數5
期刊Physica Status Solidi C: Conferences
發行號7
DOIs
出版狀態Published - 2003 十二月 1
事件5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
持續時間: 2003 五月 252003 五月 30

    指紋

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

引用此

Chang, C. S., Chang, S-J., Su, Y. K., Lai, W-C., Kuo, C. H., Wang, C. K., Lin, Y-C., Hsu, Y. P., Shei, S. C., Lo, H. M., Ke, J. C., & Sheu, J-K. (2003). High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode. Physica Status Solidi C: Conferences, (7), 2227-2231. https://doi.org/10.1002/pssc.200303384