摘要
Double-quantum-well GaAs/lnGaAs/GaAs pseudomorphic heterostructures by δ-doping the InGaAs channels are demonstrated for the first time. A very high carrier density of more than 1 x 1013 cm-2 along with an enhanced mobility of 2100 cm2/V. s at 300 K are achieved. Influences of barrier thickness on the carrier densities and mobilities are also investigated.
原文 | English |
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頁(從 - 到) | L1-L3 |
期刊 | Japanese Journal of Applied Physics |
卷 | 34 |
發行號 | 1 |
DOIs | |
出版狀態 | Published - 1995 一月 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)