High carrier density and mobility in gaas/ingaas/gaas double delta-doped channels heterostructures

H. M. Shieh; W. C. Liu; C. Y. Chang; M. J. Kao; W. C. Hsu

doi:10.7567/JJAP.34.L1

High carrier density and mobility in gaas/ingaas/gaas double delta-doped channels heterostructures

H. M. Shieh, W. C. Liu, C. Y. Chang, M. J. Kao, W. C. Hsu

研究成果: Article › 同行評審

摘要

Double-quantum-well GaAs/lnGaAs/GaAs pseudomorphic heterostructures by δ-doping the InGaAs channels are demonstrated for the first time. A very high carrier density of more than 1 x 10¹³ cm^-2 along with an enhanced mobility of 2100 cm²/V. s at 300 K are achieved. Influences of barrier thickness on the carrier densities and mobilities are also investigated.

原文	English
頁（從 - 到）	L1-L3
期刊	Japanese Journal of Applied Physics
卷	34
發行號	1
DOIs	https://doi.org/10.7567/JJAP.34.L1
出版狀態	Published - 1995 一月

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.7567/JJAP.34.L1

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abstract = "Double-quantum-well GaAs/lnGaAs/GaAs pseudomorphic heterostructures by δ-doping the InGaAs channels are demonstrated for the first time. A very high carrier density of more than 1 x 1013 cm-2 along with an enhanced mobility of 2100 cm2/V. s at 300 K are achieved. Influences of barrier thickness on the carrier densities and mobilities are also investigated.",

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