@inproceedings{b4dfa00c0dfe41caaa67ed94c355a7de,
title = "High carrier density and mobility in GaAs/InGaAs/GaAs double delta-doped channels heterostructures",
abstract = "Double quantum well with ¿doped lattice-strain GaAs/InGaAs/GaAs pseudomorphic heterostructures have been fabricated for the first time. Very high carrier density of more than 1×1013cm¿2 along with enhanced mobility of 2100 cm2/vs at 300K are achieved. Influence of barrier thickness on the carrier densities and mobilities are also investigated.",
author = "Kao, \{M. J.\} and Hsu, \{W. C.\} and Liu, \{W. C.\} and Shieh, \{H. M.\}",
note = "Publisher Copyright: {\textcopyright} 1994 Editions Frontieres.; 24th European Solid State Device Research Conference, ESSDERC 1994 ; Conference date: 11-09-1994 Through 15-09-1994",
year = "1994",
language = "English",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "559--562",
editor = "Peter Ashburn and Chris Hill",
booktitle = "European Solid-State Device Research Conference",
address = "United States",
}