Be-doped In0.5Ga0.5As quantum dot lasers are fabricated and characterized between 20 and 70 °C. At 20 °C, the threshold current per dot layer and the slope efficiency are 22 mA and 0.18 W/A, respectively. The internal quantum efficiency and internal loss are 36% and 4.2 cm-1, respectively. Characteristic temperature as high as 122 K has been measured for these lasers. Room temperature continuous-wave operation has also been achieved.
|頁（從 - 到）||905-908|
|期刊||Journal of Crystal Growth|
|出版狀態||Published - 1999 五月|
|事件||Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes|
持續時間: 1998 八月 31 → 1998 九月 4
All Science Journal Classification (ASJC) codes