High characteristic temperature Be-doped In0.5Ga0.5As quantum dot lasers grown on GaAs substrates by molecular beam epitaxy

Tzer En Nee, Nien Tze Yeh, Jia Ming Lee, Jen Inn Chyi, Ching Ting Lee

研究成果: Conference article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Be-doped In0.5Ga0.5As quantum dot lasers are fabricated and characterized between 20 and 70 °C. At 20 °C, the threshold current per dot layer and the slope efficiency are 22 mA and 0.18 W/A, respectively. The internal quantum efficiency and internal loss are 36% and 4.2 cm-1, respectively. Characteristic temperature as high as 122 K has been measured for these lasers. Room temperature continuous-wave operation has also been achieved.

原文English
頁(從 - 到)905-908
頁數4
期刊Journal of Crystal Growth
201
DOIs
出版狀態Published - 1999 五月
事件Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
持續時間: 1998 八月 311998 九月 4

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 無機化學
  • 材料化學

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