High conduction-band offset of AlInAsSb/InGaAs multiple quantum wells grown by metalorganic vapor phase epitaxy

J. R. Chang, Y. K. Su, C. L. Lin, K. M. Wu, Y. T. Lu, D. H. Jaw, H. P. Shiao, W. Lin

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

MOVPE grown unstrained Al0.66In0.34As0.85Sb0.15/In0.53Ga0.47As multiple quantum well (MQW) structures are investigated based on low-temperature photoluminescence. A 0.90±0.05 conduction-band offset ratio is observed for the AlInAsSb/InGaAs heterojunction.

原文English
頁(從 - 到)3495-3497
頁數3
期刊Applied Physics Letters
74
發行號23
DOIs
出版狀態Published - 1999 六月 7

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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