High-detectivity GaN MSM photodetectors with low-temperature GaN cap layers and Ir/Pt contact electrodes

Chia Lin Yu, Ping Chuan Chang, Shoou Jinn Chang, San Lein Wu

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

GaN-based metal-semiconductor-metal (MSM) UV photodetectors (PDs) with a low-temperature (LT) GaN cap layer and IrPt contact electrodes were fabricated. Compared with the conventional NiAu contacts, we found that IrPt contacts can reduce the dark current. Further, a smaller dark current and larger UV-to-visible rejection ratio obtained from the PD with LT GaN cap layer and IrPt contact electrodes were determined. Furthermore, the noise equivalent power and detectivity (D*) were respectively obtained as 2.75× 10-13 W and 1.76× 1012 cm Hz0.5 W-1 for the aforementioned PDs.

原文English
頁(從 - 到)171-174
頁數4
期刊Electrochemical and Solid-State Letters
10
發行號6
DOIs
出版狀態Published - 2007

All Science Journal Classification (ASJC) codes

  • 化學工程 (全部)
  • 材料科學(全部)
  • 物理與理論化學
  • 電化學
  • 電氣與電子工程

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