High dopant activation of phosphorus in Ge crystal with high-temperature implantation and two-step microwave annealing

Tzu Lang Shih, Yin Hsien Su, Wen Hsi Lee

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

In this letter, high-temperature ion implantation and low-temperature microwave annealing were employed to achieve high n-type active concentrations, approaching the solid solubility limit, in germanium. To use the characteristics of microwave annealing more effectively, a two-step microwave annealing process was employed. In the first annealing step, a high-power (1200 W; 425 °C) microwave was used to achieve solid-state epitaxial regrowth and to enhance microwave absorption. In the second annealing step, contrary to the usual process of thermal annealing with higher temperature, a lower-power (900 W; 375 °C) microwave process was used to achieve a low sheet resistance, 78Ω/□, and a high carrier concentration, 1.025 × 1020 P/cm3, which is close to the solid solubility limit of 2 × 1020 P/cm3.

原文English
文章編號122103
期刊Applied Physics Letters
109
發行號12
DOIs
出版狀態Published - 2016 九月 19

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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