摘要
In this paper, a-Si:H/a-Si:H tandem solar cells have been fabricated using a plasma enhanced chemical vapor deposition. The solar cell has a structure of glass/textured-SnO 2/p-a-SiC:H/i-a-Si:H/n-μc-Si:H/p-μc-Si:H/p-a- SiC:H/i-a-Si:H/n-μc-Si:H/gallium-doped zinc oxide/Ag. Higher efficiency in a-Si:H/a-Si:H tandem solar cells can be achieved by use of a good tunnel recombination junction (TRJ) and current matching. Accordingly, solar cells with a n-μc-Si:H/p-μc-Si:H TRJ are investigated. This paper studies the influence of the thickness of the top intrinsic amorphous silicon (i-a-Si:H) layer with regard to short circuit current density and current matching between the top and the bottom cells. Experimental results with lab-fabricated samples show that the optimal thickness of the i-a-Si:H layer in the top and bottom cells is 60 and 250 nm, respectively. An initial conversion efficiency of 10.29% is achieved for the optimized a-Si:H/a-Si:H tandem solar cell. Light-induced degradation of the solar cells is about 17%.
| 原文 | English |
|---|---|
| 頁（從 - 到） | 3684-3687 |
| 頁數 | 4 |
| 期刊 | Thin Solid Films |
| 卷 | 520 |
| 發行號 | 9 |
| DOIs | |
| 出版狀態 | Published - 2012 二月 29 |
指紋
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
引用此文
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High efficiency a-Si:H/a-Si:H solar cell with a tunnel recombination junction and a n-type μc-Si:H layer. / Chang, Ping Kuan; Lu, Chun Hsiung; Yeh, Chih Hung; Houng, Mau Phon.
於: Thin Solid Films, 卷 520, 編號 9, 29.02.2012, p. 3684-3687.研究成果: Article
TY - JOUR
T1 - High efficiency a-Si:H/a-Si:H solar cell with a tunnel recombination junction and a n-type μc-Si:H layer
AU - Chang, Ping Kuan
AU - Lu, Chun Hsiung
AU - Yeh, Chih Hung
AU - Houng, Mau Phon
PY - 2012/2/29
Y1 - 2012/2/29
N2 - In this paper, a-Si:H/a-Si:H tandem solar cells have been fabricated using a plasma enhanced chemical vapor deposition. The solar cell has a structure of glass/textured-SnO 2/p-a-SiC:H/i-a-Si:H/n-μc-Si:H/p-μc-Si:H/p-a- SiC:H/i-a-Si:H/n-μc-Si:H/gallium-doped zinc oxide/Ag. Higher efficiency in a-Si:H/a-Si:H tandem solar cells can be achieved by use of a good tunnel recombination junction (TRJ) and current matching. Accordingly, solar cells with a n-μc-Si:H/p-μc-Si:H TRJ are investigated. This paper studies the influence of the thickness of the top intrinsic amorphous silicon (i-a-Si:H) layer with regard to short circuit current density and current matching between the top and the bottom cells. Experimental results with lab-fabricated samples show that the optimal thickness of the i-a-Si:H layer in the top and bottom cells is 60 and 250 nm, respectively. An initial conversion efficiency of 10.29% is achieved for the optimized a-Si:H/a-Si:H tandem solar cell. Light-induced degradation of the solar cells is about 17%.
AB - In this paper, a-Si:H/a-Si:H tandem solar cells have been fabricated using a plasma enhanced chemical vapor deposition. The solar cell has a structure of glass/textured-SnO 2/p-a-SiC:H/i-a-Si:H/n-μc-Si:H/p-μc-Si:H/p-a- SiC:H/i-a-Si:H/n-μc-Si:H/gallium-doped zinc oxide/Ag. Higher efficiency in a-Si:H/a-Si:H tandem solar cells can be achieved by use of a good tunnel recombination junction (TRJ) and current matching. Accordingly, solar cells with a n-μc-Si:H/p-μc-Si:H TRJ are investigated. This paper studies the influence of the thickness of the top intrinsic amorphous silicon (i-a-Si:H) layer with regard to short circuit current density and current matching between the top and the bottom cells. Experimental results with lab-fabricated samples show that the optimal thickness of the i-a-Si:H layer in the top and bottom cells is 60 and 250 nm, respectively. An initial conversion efficiency of 10.29% is achieved for the optimized a-Si:H/a-Si:H tandem solar cell. Light-induced degradation of the solar cells is about 17%.
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U2 - 10.1016/j.tsf.2011.12.083
DO - 10.1016/j.tsf.2011.12.083
M3 - Article
AN - SCOPUS:84857365172
VL - 520
SP - 3684
EP - 3687
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 9
ER -