High efficiency amorphous silicon solar cells with high absorption coefficient intrinsic amorphous silicon layers

Ping Kuan Chang, Po Tsung Hsieh, Fu Ji Tsai, Chun Hsiung Lu, Chih Hung Yeh, Na Fu Wang, Mau Phon Houng

研究成果: Article

3 引文 (Scopus)

摘要

This paper considers the intrinsic layer of hydrogenated amorphous silicon (a-Si:H) solar cells. The deposition temperatures (T d) and electrode distances (between cathode and anode, E/S) are important factors for a-Si:H solar cells. Thus, this study examines the effects of deposition temperatures and electrode distances in the intrinsic layer of a-Si:H solar cells with regard to enhanced the short-circuit current density (J sc) and thereby conversion efficiency. It is shown that the J sc of a-Si:H solar cells can be increased by proper choice of T d and E/S of the i-a-Si:H layers. The J sc of the a-Si:H solar cells is largely dependent on light absorption of the i-a-Si:H layer. It is demonstrated that the absorption coefficient in an i-a-Si:H layer can be increased to provide higher J sc under fixed thickness. Results show that the optimized parameters improve the J sc of a-Si:H solar cells to 16.52 mA/cm 2, yielding an initial conversion efficiency of 10.86%.

原文English
頁(從 - 到)5042-5045
頁數4
期刊Thin Solid Films
520
發行號15
DOIs
出版狀態Published - 2012 五月 31

指紋

Silicon solar cells
Amorphous silicon
amorphous silicon
absorptivity
Solar cells
solar cells
Conversion efficiency
Electrodes
electrodes
short circuit currents
electromagnetic absorption
Short circuit currents
Light absorption
Anodes
Cathodes
anodes
Current density
cathodes
current density
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

引用此文

Chang, Ping Kuan ; Hsieh, Po Tsung ; Tsai, Fu Ji ; Lu, Chun Hsiung ; Yeh, Chih Hung ; Wang, Na Fu ; Houng, Mau Phon. / High efficiency amorphous silicon solar cells with high absorption coefficient intrinsic amorphous silicon layers. 於: Thin Solid Films. 2012 ; 卷 520, 編號 15. 頁 5042-5045.
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High efficiency amorphous silicon solar cells with high absorption coefficient intrinsic amorphous silicon layers. / Chang, Ping Kuan; Hsieh, Po Tsung; Tsai, Fu Ji; Lu, Chun Hsiung; Yeh, Chih Hung; Wang, Na Fu; Houng, Mau Phon.

於: Thin Solid Films, 卷 520, 編號 15, 31.05.2012, p. 5042-5045.

研究成果: Article

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AU - Wang, Na Fu

AU - Houng, Mau Phon

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AB - This paper considers the intrinsic layer of hydrogenated amorphous silicon (a-Si:H) solar cells. The deposition temperatures (T d) and electrode distances (between cathode and anode, E/S) are important factors for a-Si:H solar cells. Thus, this study examines the effects of deposition temperatures and electrode distances in the intrinsic layer of a-Si:H solar cells with regard to enhanced the short-circuit current density (J sc) and thereby conversion efficiency. It is shown that the J sc of a-Si:H solar cells can be increased by proper choice of T d and E/S of the i-a-Si:H layers. The J sc of the a-Si:H solar cells is largely dependent on light absorption of the i-a-Si:H layer. It is demonstrated that the absorption coefficient in an i-a-Si:H layer can be increased to provide higher J sc under fixed thickness. Results show that the optimized parameters improve the J sc of a-Si:H solar cells to 16.52 mA/cm 2, yielding an initial conversion efficiency of 10.86%.

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