High-efficiency InGaN-GaN MQW green light-emitting diodes with CART and DBR structures

C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. K. Sheu, J. F. Chen

研究成果: Article同行評審

62 引文 斯高帕斯(Scopus)

摘要

Distributed Bragg reflector (DBR) and charge asymmetric resonance tunneling (CART) structures were applied to nitride-based green light-emitting diodes (LEDs) to enhance their output efficiency. It was found that we can reduce the forward voltage at 20 mA from 3.7 to 3.2 V with the inclusion of CART structure. It was also found that the electroluminescence peak wavelength of the CART LED is less sensitive to the amount of injection current. The output power and external quantum efficiency of the CART LED with DBR structure measured at 20 mA can reach 7.2 mW and 11.25%, respectively.

原文English
頁(從 - 到)284-288
頁數5
期刊IEEE Journal on Selected Topics in Quantum Electronics
8
發行號2
DOIs
出版狀態Published - 2002 三月 1

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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