High-efficiency si solar cell fabricated by ion implantation and inline backside rounding process

Chien Ming Lee, Sheng Po Chang, Shoou Jinn Chang, Ching In Wu

研究成果: Article

7 引文 (Scopus)

摘要

We introduce a novel, high-throughput processing method to produce high-efficiency solar cells via a backside rounding process and ion implantation. Ion implantation combined with a backside rounding process is investigated. The ion implantation process substituted for thermal POCl 3 diffusion performs better R sheet uniformity (<3%). The U-4100 spectrophotometer shows that wafers with backside rounding process perform higher reflectivity at long wavelengths. Industrial screen printed (SP) Al-BSF on different etching depth groups was analyzed. SEMs show that increasing etch depth improves back surface field (BSF). The I - V measurement revealed that etching depths of 6 m ± 0.1 m due to having the highest VOC and ISC, it has the best performance. SEMs also show that higher etching depths also produce uniform Al melting and better BSF. This is in agreement with IQE response data at long wavelengths.

原文English
文章編號670981
期刊International Journal of Photoenergy
2012
DOIs
出版狀態Published - 2012 十二月 1

指紋

Ion implantation
ion implantation
Etching
Solar cells
solar cells
etching
Wavelength
Scanning electron microscopy
Spectrophotometers
Volatile organic compounds
scanning electron microscopy
volatile organic compounds
Melting
spectrophotometers
Throughput
wavelengths
implantation
melting
wafers
Processing

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)

引用此文

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