High-electrical-resistivity CVD diamond films with tri-layer UNCD-MCD-UNCD structures for 3DIC applications

Poying Chen, Jiheng Jiang, Yuming Cheng, M. J. Dai, Yonhua Tzeng

研究成果: Conference contribution

摘要

Three-dimensional Integrated-circuit (3DIC) needs coatings with both high thermal conductivity and high electrical insulation for isolating electronic devices and interconnects while spreading heat generated by stacked integrated circuits effectively. Single crystalline diamond possesses excellent electrical insulation and thermal conductivity, which is a perfect candidate for the need by 3DIC. However, a large-area coating of single crystalline diamond is difficult to achieve. So we use polycrystalline diamond films instead. But for polycrystalline diamond films with many grain boundaries, the severe phonon scattering and electrically conductive graphitic carbon contents in grain boundaries cause the electrical insulation and the thermal conductivity to decrease. The smaller the grain size is, usually the decrease is more severe. A good compromise is to retain the high thermal conductivity of diamond crystals while minimizing the electrical conductivity of polycrystalline diamond coatings by removing the charge-transfer doping mechanism enabled by hydrogen termination on diamond grains and minimizing graphitic carbon in the grain boundaries. This paper reports a large-area tri-layer diamond coating structure to achieve sustainable 1010 μcm electrical resistivity in the ambient atmosphere. A nanodiamond base layer provides a high-density diamond seeding layer for the polycrystalline diamond film to contain few voids and graphitic carbon in the grain boundaries. The second nanodiamond film is used to encapsulate the de-hydrogenated microcrystalline diamond film to prevent degradation of electrical resistance due to the ambient atmosphere.

原文English
主出版物標題2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
頁面121-124
頁數4
DOIs
出版狀態Published - 2013
事件2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 - Beijing, China
持續時間: 2013 八月 52013 八月 8

出版系列

名字Proceedings of the IEEE Conference on Nanotechnology
ISSN(列印)1944-9399
ISSN(電子)1944-9380

Other

Other2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
國家China
城市Beijing
期間13-08-0513-08-08

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

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