High electrostatic discharge protection of InGaN/GaN MQW LEDs by using GaN Schottky diodes

Chin Hsiang Chen, Shoou Jinn Chang, Yan Kuin Su

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

GaN Schottky diodes were built internally inside the GaN green LEDs by using etching and re-deposition techniques. By proper selecting the etching areas underneath the bonding pads, one can minimize the optical loss due to the etching process. Although the reverse current, the forward turn-on voltage and device lifetime degradation were all higher for the GaN LED with Schottky diode, it was found that the internal Schottky diode could significantly increase the ESD threshold from 450 V to 1300 V.

原文English
頁(從 - 到)91-94
頁數4
期刊Physica Status Solidi (A) Applied Research
200
發行號1
DOIs
出版狀態Published - 2003 十一月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學

指紋

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