High field-emission stability of offset-thin-film transistor-controlled Al-doped zinc oxide nanowires

Po Yu Yang, Jyh Liang Wang, Wei Chih Tsai, Shui Jinn Wang, Jia Chuan Lin, I. Che Lee, Chia Tsung Chang, Huang Chung Cheng

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

Aluminum-doped zinc oxide (AZO) nanowire (NW) arrays incorporating an offset thin-film transistor (offset-TFT) have been proposed to achieve high field-emission (FE) stability. The AZO NW field emission arrays (FEAs) were hydrothermally grown at a low temperature of 85 °C. The uncontrolled AZO NW FEAs demonstrated superior FE characteristics (i.e., turn-on field of ̃2:17 V/μm and threshold field of ̃3:43 V/μm) compared with those of the conventional CNT FEAs grown at a temperature below 600 °C. However, uncontrolled AZO NW FEAs show a larger current fluctuation of 15.6%. Therefore, the offset-TFTs were used to control the AZO NW FEAs. Consequently, the fluctuation of AZO NW FEAs could be significantly reduced to less than 2%. This novel field emission device exhibits good emission stability, low-voltage controllability, lowtemperature processing, and structural simplicity, making it promising for applications in flat panel displays.

原文English
文章編號04DN07
期刊Japanese journal of applied physics
50
發行號4 PART 2
DOIs
出版狀態Published - 2011 4月

All Science Journal Classification (ASJC) codes

  • 一般工程
  • 一般物理與天文學

指紋

深入研究「High field-emission stability of offset-thin-film transistor-controlled Al-doped zinc oxide nanowires」主題。共同形成了獨特的指紋。

引用此