High gain p-n-p gated lateral bipolar action in a fully depleted counter-type channel p-MOSFET structure

Engineering

• Current-Voltage Characteristic 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Two Dimensional 66%
• Current Gain 66%
• Analytical Model 33%
• Bipolar Transistor 33%
• Injection Level 33%

Keyphrases

• Validity Range 33%
• High-level Injection 33%