High heat dissipation package structure of nitride-based semiconductor green light emitting diodes

K. C. Chen, Ricky W. Chuang, Y. K. Su, C. L. Lin, J. Q. Huang

研究成果: Conference contribution

摘要

The thermal management has become increasingly important when comes to device applications using high power light emitting diodes (LEDs). To thermally manage the devices in a most effective fashion, we report a novel packaging technique in which a copper electroplating process is directly applied over the green LED chips. With the copper-encapsulated layer, the maximum injection current subsequently administered to these LED chips can be increased easily from a conventional 900 mA to more than 1050 mA at room temperature. It was found that the luminous intensity at 350 and 900 mA of the novel package LEDs showed 69% and 84% enhancement as compared with that of the conventional package ones. In this paper, the electrical and optical characteristics of GaN-based green LEDs with direct copper plating were discussed.

原文English
主出版物標題Proceedings - 2007 International Symposium on Microelectronics, IMAPS 2007
頁面84-86
頁數3
出版狀態Published - 2007 十二月 1
事件40th International Symposium on Microelectronics, IMAPS 2007 - San Jose, CA, United States
持續時間: 2007 十一月 112007 十一月 15

出版系列

名字Proceedings - 2007 International Symposium on Microelectronics, IMAPS 2007

Other

Other40th International Symposium on Microelectronics, IMAPS 2007
國家United States
城市San Jose, CA
期間07-11-1107-11-15

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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