In this work, a novel dual-well structure GeSi-channel p-MESFET grown by silicon molecular-beam epitaxy has been proposed. Based on Hall measurements, a hole mobility of as high as 2680 (150) cm2V-1s-1 and a sheet hole concentration of 2×l010 (5.2×1011) cm-2 at 77 (300) K have been obtained. The measured transconductance of the proposed device is 0.44 mS/mm for a gate length of 5 urn.
|出版狀態||Published - 1994|
|事件||1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan|
持續時間: 1994 7月 12 → 1994 7月 15
|Conference||1994 International Electron Devices and Materials Symposium, EDMS 1994|
|期間||94-07-12 → 94-07-15|
All Science Journal Classification (ASJC) codes