High hole mobility transistor (HHMT) with dual Si/Ge0.4Si0.6/Si wells structure grown by Si MBE

S. J. Wang; S. L. Wu; H. D. Chung; W. Chang; K. L. Wang

doi:10.1109/EDMS.1994.771136

High hole mobility transistor (HHMT) with dual Si/Ge_0.4Si_0.6/Si wells structure grown by Si MBE

S. J. Wang, S. L. Wu, H. D. Chung, W. Chang, K. L. Wang

研究成果: Paper › 同行評審

摘要

In this work, a novel dual-well structure GeSi-channel p-MESFET grown by silicon molecular-beam epitaxy has been proposed. Based on Hall measurements, a hole mobility of as high as 2680 (150) cm²V_-1s_-1 and a sheet hole concentration of 2×l0¹⁰ (5.2×10¹¹) cm^-2 at 77 (300) K have been obtained. The measured transconductance of the proposed device is 0.44 mS/mm for a gate length of 5 urn.

原文	English
DOIs	https://doi.org/10.1109/EDMS.1994.771136
出版狀態	Published - 1994
事件	1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan 持續時間: 1994 7月 12 → 1994 7月 15

Conference

Conference	1994 International Electron Devices and Materials Symposium, EDMS 1994
國家/地區	Taiwan
城市	Hsinchu
期間	94-07-12 → 94-07-15

All Science Journal Classification (ASJC) codes

工業與製造工程
電子、光磁材料
電氣與電子工程

存取文件

10.1109/EDMS.1994.771136

其它文件與鏈接

引用此

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title = "High hole mobility transistor (HHMT) with dual Si/Ge0.4Si0.6/Si wells structure grown by Si MBE",

abstract = "In this work, a novel dual-well structure GeSi-channel p-MESFET grown by silicon molecular-beam epitaxy has been proposed. Based on Hall measurements, a hole mobility of as high as 2680 (150) cm2V-1s-1 and a sheet hole concentration of 2×l010 (5.2×1011) cm-2 at 77 (300) K have been obtained. The measured transconductance of the proposed device is 0.44 mS/mm for a gate length of 5 urn.",

author = "Wang, {S. J.} and Wu, {S. L.} and Chung, {H. D.} and W. Chang and Wang, {K. L.}",

note = "Publisher Copyright: {\textcopyright} 1994 IEEE.; 1994 International Electron Devices and Materials Symposium, EDMS 1994 ; Conference date: 12-07-1994 Through 15-07-1994",

year = "1994",

doi = "10.1109/EDMS.1994.771136",

language = "English",

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TY - CONF

T1 - High hole mobility transistor (HHMT) with dual Si/Ge0.4Si0.6/Si wells structure grown by Si MBE

AU - Wang, S. J.

AU - Wu, S. L.

AU - Chung, H. D.

AU - Chang, W.

AU - Wang, K. L.

PY - 1994

Y1 - 1994

N2 - In this work, a novel dual-well structure GeSi-channel p-MESFET grown by silicon molecular-beam epitaxy has been proposed. Based on Hall measurements, a hole mobility of as high as 2680 (150) cm2V-1s-1 and a sheet hole concentration of 2×l010 (5.2×1011) cm-2 at 77 (300) K have been obtained. The measured transconductance of the proposed device is 0.44 mS/mm for a gate length of 5 urn.

AB - In this work, a novel dual-well structure GeSi-channel p-MESFET grown by silicon molecular-beam epitaxy has been proposed. Based on Hall measurements, a hole mobility of as high as 2680 (150) cm2V-1s-1 and a sheet hole concentration of 2×l010 (5.2×1011) cm-2 at 77 (300) K have been obtained. The measured transconductance of the proposed device is 0.44 mS/mm for a gate length of 5 urn.

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U2 - 10.1109/EDMS.1994.771136

DO - 10.1109/EDMS.1994.771136

M3 - Paper

AN - SCOPUS:85063579585

T2 - 1994 International Electron Devices and Materials Symposium, EDMS 1994

Y2 - 12 July 1994 through 15 July 1994

ER -