High-indium-content InGaN/GaN multi-quantum-well (MQW) light-emitting diode (LED) structures were epitaxially grown by metalorganic vapor phase epitaxy (MOVPE). With 70% indium in the InGaN well layers, it was found that the photoluminescence (PL) full-width at half maximum (FWHM) is stronger than that in the case of low-indium-content InGaN/GaN MQW LED structures. It was also found that the peak position of electroluminescence (EL) fabricated In0.7Ga0.3N/GaN LED depends strongly on injection current. As injection current increased from 1 mA to 150 mA, it was found that the output color of the In0.7Ga0.3N/GaN LED changed from orange to yellow, to yellowish green, and finally to yellowish white.
|頁（從 - 到）||2281-2283|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版狀態||Published - 2003 四月 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)