High-indium-content InGaN/GaN multiple-quantum-well light-emitting diodes

Chin Hsiang Chen, Shoou Jinn Chang, Yan Kuin Su

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

High-indium-content InGaN/GaN multi-quantum-well (MQW) light-emitting diode (LED) structures were epitaxially grown by metalorganic vapor phase epitaxy (MOVPE). With 70% indium in the InGaN well layers, it was found that the photoluminescence (PL) full-width at half maximum (FWHM) is stronger than that in the case of low-indium-content InGaN/GaN MQW LED structures. It was also found that the peak position of electroluminescence (EL) fabricated In0.7Ga0.3N/GaN LED depends strongly on injection current. As injection current increased from 1 mA to 150 mA, it was found that the output color of the In0.7Ga0.3N/GaN LED changed from orange to yellow, to yellowish green, and finally to yellowish white.

原文English
頁(從 - 到)2281-2283
頁數3
期刊Japanese Journal of Applied Physics
42
發行號4 B
DOIs
出版狀態Published - 2003 4月

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

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