Two high-k dielectric materials (Al2O3 and HfO 2) were deposited on n-type (100) and (110) InAs surface orientations to investigate physical properties of the oxide/semiconductor interfaces and the interface trap density (Dit). X-ray photoelectron spectroscopy analyses (XPS) for native oxides of (100) and (110) as-grown n-InAs epi wafers show an increase in As-oxide on the (100) surface and an increase in InOx on the (110) surface. In addition, XPS analyses of high-k (Al2O3 and HfO2) on n-InAs epi show that the intrinsic native oxide difference between (100) and (110) epi surfaces were eliminated by applying conventional in-situ pre-treatment (TriMethyAluminium (TMA)) before the high-k deposition. The capacitance-voltage (C-V) characterization of HfO2 and Al2O3 MOSCAPs on both types of n-InAs surfaces shows very similar C-V curves. The interface trap density (Dit) profiles show Dit minima of 6.1 × 1012/6.5 × 10 12 and 6.6 × 1012/7.3 × 1012 cm-2 eV- 1 for Al2O3 and HfO 2, respectively for (100) and (110) InAs surfaces. The similar interface trap density (Dit) on (100) and (110) surface orientation were observed, which is beneficial to future InAs FinFET device with both (100) and (110) surface channel orientations present.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)