High linearity power amplifier for PHS base station using a 50 mm AlGaAs/InGaAs/GaAs PHEMT

H. Z. Liu, H. K. Huang, C. C. Wang, Y. H. Wang, C. H. Chang, W. Wu, C. L. Wu, C. S. Chang

研究成果: Paper

摘要

In this paper, a high linearity, high efficiency 1.9 GHz power amplifier sub-system using a 50 mm AlGaAs/InGaAs/GaAs PHEMT for PHS 500 mW base station is demonstrated. Under 10 V and 3.8 A bias condition, the output stage amplifier has achieved 12.5 dB small-signal gain, 43.7 dBm P1dB with 43% PAE and 44 dBm saturated output power with 41% PAE. For the amplifier sub-system, the ACPR at 600 KHz and 900 KHz offset from 1.906 GHz when operating at 38.5 dBm output power with π/4-DQPSK signal are better than 75 dBc and 79 dBc, respectively.

原文English
頁面105-108
頁數4
出版狀態Published - 2004 十二月 1
事件2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology - Tainan, Taiwan
持續時間: 2004 十二月 62004 十二月 9

Other

Other2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology
國家Taiwan
城市Tainan
期間04-12-0604-12-09

指紋

Power amplifiers
Base stations

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

引用此文

Liu, H. Z., Huang, H. K., Wang, C. C., Wang, Y. H., Chang, C. H., Wu, W., ... Chang, C. S. (2004). High linearity power amplifier for PHS base station using a 50 mm AlGaAs/InGaAs/GaAs PHEMT. 105-108. 論文發表於 2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology, Tainan, Taiwan.
Liu, H. Z. ; Huang, H. K. ; Wang, C. C. ; Wang, Y. H. ; Chang, C. H. ; Wu, W. ; Wu, C. L. ; Chang, C. S. / High linearity power amplifier for PHS base station using a 50 mm AlGaAs/InGaAs/GaAs PHEMT. 論文發表於 2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology, Tainan, Taiwan.4 p.
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abstract = "In this paper, a high linearity, high efficiency 1.9 GHz power amplifier sub-system using a 50 mm AlGaAs/InGaAs/GaAs PHEMT for PHS 500 mW base station is demonstrated. Under 10 V and 3.8 A bias condition, the output stage amplifier has achieved 12.5 dB small-signal gain, 43.7 dBm P1dB with 43{\%} PAE and 44 dBm saturated output power with 41{\%} PAE. For the amplifier sub-system, the ACPR at 600 KHz and 900 KHz offset from 1.906 GHz when operating at 38.5 dBm output power with π/4-DQPSK signal are better than 75 dBc and 79 dBc, respectively.",
author = "Liu, {H. Z.} and Huang, {H. K.} and Wang, {C. C.} and Wang, {Y. H.} and Chang, {C. H.} and W. Wu and Wu, {C. L.} and Chang, {C. S.}",
year = "2004",
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language = "English",
pages = "105--108",
note = "2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology ; Conference date: 06-12-2004 Through 09-12-2004",

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Liu, HZ, Huang, HK, Wang, CC, Wang, YH, Chang, CH, Wu, W, Wu, CL & Chang, CS 2004, 'High linearity power amplifier for PHS base station using a 50 mm AlGaAs/InGaAs/GaAs PHEMT', 論文發表於 2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology, Tainan, Taiwan, 04-12-06 - 04-12-09 頁 105-108.

High linearity power amplifier for PHS base station using a 50 mm AlGaAs/InGaAs/GaAs PHEMT. / Liu, H. Z.; Huang, H. K.; Wang, C. C.; Wang, Y. H.; Chang, C. H.; Wu, W.; Wu, C. L.; Chang, C. S.

2004. 105-108 論文發表於 2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology, Tainan, Taiwan.

研究成果: Paper

TY - CONF

T1 - High linearity power amplifier for PHS base station using a 50 mm AlGaAs/InGaAs/GaAs PHEMT

AU - Liu, H. Z.

AU - Huang, H. K.

AU - Wang, C. C.

AU - Wang, Y. H.

AU - Chang, C. H.

AU - Wu, W.

AU - Wu, C. L.

AU - Chang, C. S.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - In this paper, a high linearity, high efficiency 1.9 GHz power amplifier sub-system using a 50 mm AlGaAs/InGaAs/GaAs PHEMT for PHS 500 mW base station is demonstrated. Under 10 V and 3.8 A bias condition, the output stage amplifier has achieved 12.5 dB small-signal gain, 43.7 dBm P1dB with 43% PAE and 44 dBm saturated output power with 41% PAE. For the amplifier sub-system, the ACPR at 600 KHz and 900 KHz offset from 1.906 GHz when operating at 38.5 dBm output power with π/4-DQPSK signal are better than 75 dBc and 79 dBc, respectively.

AB - In this paper, a high linearity, high efficiency 1.9 GHz power amplifier sub-system using a 50 mm AlGaAs/InGaAs/GaAs PHEMT for PHS 500 mW base station is demonstrated. Under 10 V and 3.8 A bias condition, the output stage amplifier has achieved 12.5 dB small-signal gain, 43.7 dBm P1dB with 43% PAE and 44 dBm saturated output power with 41% PAE. For the amplifier sub-system, the ACPR at 600 KHz and 900 KHz offset from 1.906 GHz when operating at 38.5 dBm output power with π/4-DQPSK signal are better than 75 dBc and 79 dBc, respectively.

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Liu HZ, Huang HK, Wang CC, Wang YH, Chang CH, Wu W 等. High linearity power amplifier for PHS base station using a 50 mm AlGaAs/InGaAs/GaAs PHEMT. 2004. 論文發表於 2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology, Tainan, Taiwan.